一种频综SiP的设计开发  

Design and Development of A Frequency Synthesis SiP

作　　者：王燕[1] 苏梦蜀 WANG Yan;SU Mengshu(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子工艺技术》2022年第5期259-261,274,共4页Electronics Process Technology

摘　　要：描述了一种基于锁相合成的高密度频综系统级封装(SiP)的设计思路和问题分析。综合运用电路、电磁、热、力等多维度物理量进行协同仿真和工程分析,在RF类产品不断小型化的趋势下,不断探索和开拓设计边界。高密度频综SiP的技术指标达到项目的技术要求,已应用于多项工程课题。The design idea and problem analysis of a high density frequency synthesis SiP based on phase-locked synthesis is described.The multi-dimensional physical quantities such as circuit,electromagnetism,heat and force are comprehensively used for collaborative simulation and engineering analysis,in the trend of continuous miniaturization of RF products,the design boundary is constantly explored and explored.The technical index of high density frequency synthesis SiP meets the technical requirements of the project and has been applied in many other projects.

关 键 词：频综 系统级封装 电磁 热力学 模式 

分 类 号：TN8[电子电信—信息与通信工程]