迷走神经刺激术对药物难治性癫痫术后脑电影响的研究进展  

Research Progress on the Effect of Vagus Nerve Stimulation on Electroencephalogram of Drug-Resistant Epilepsy

作　　者：屈直闯 张元元 罗娟[1,2] 陈欣 树海峰 QU Zhichuang;ZHANG Yuanyuan;LUO Juan;CHEN Xin;SHU Haifeng(Department of Neurosurgery,General Hospital of the Western Theater Command of the PLA,Chengdu Sichuan 610083,China;Department of Neurosurgery,Affiliated Hospital of Southwest Medical University,Luzhou Sichuan 646000,China;School of Medical,Southwest Jiaotong University,Chengdu Sichuan 610031,China)

机构地区：[1]中国人民解放军西部战区总医院神经外科,四川成都610083 [2]西南医科大学附属医院神经外科,四川泸州646000 [3]西南交通大学医学院,四川成都610031

出　　处：《中国医疗设备》2022年第9期155-158,180,共5页China Medical Devices

基　　金：军事医学创新工程专项(21WQ040);联合攻关项目(2019LH01);四川省科技厅创新人才项目(22CXRC0178)。

摘　　要：迷走神经刺激术(Vagus Nerve Stimulation,VNS)主要是经手术埋置电极于颈部迷走神经的侵入性刺激技术。在治疗药物难治性癫痫的临床研究中,VNS作为药理学的辅助疗法,显示出较好的抗癫痫效应,但VNS治疗癫痫的机制尚不明确。近年来,研究表明难治性癫痫患者经VNS术后的脑电变化,可能有助于解释VNS治疗难治性癫痫的机制。本文对VNS治疗难治性癫痫患者的作用机制及VNS术后的脑电变化的临床研究进展进行简要综述。Vagus nerve stimulation(VNS)is an invasive technique of implanting electrodes into the cervical vagus nerve.As a pharmacological adjuvant therapy,VNS has shown a good antiepileptic effect in clinical studies for the treatment of drug-resistant epilepsy.However,the antiepileptic mechanism of vagal nerve stimulation is still unclear.In recent years,studies have studied the changes of electroencephalogram in patients with refractory epilepsy after VNS,which might help to explain the antiepileptic mechanism of vagal nerve stimulation.This article reviewed the mechanism of vagal nerve stimulation in the treatment of drug-resistant epilepsy and the clinical research progress of the electroencephalogram changes after VNS.

关 键 词：药物难治性癫痫 迷走神经刺激术 脑电变化 

分 类 号：R742.1[医药卫生—神经病学与精神病学]