HgCdTe多层异质结红外探测材料与器件研究进展  

Research Progress on Infrared Detection Materials and Devices of HgCdTe Multilayer Heterojunction

作　　者：陈正超 唐利斌[2,3] 郝群 王善力[2] 庄继胜[2] 孔金丞[2] 左文彬[2,3] 姬荣斌 CHEN Zhengchao;TANG Libin;HAO Qun;WANG Shanli;ZHUANG Jisheng;KONG Jincheng;ZUO Wenbin;JI Rongbin(School of Optics and Photonics,Beijing Institute of Technology,Beijing 100081,China;Kunming Institute of Physics,Kunming 650223,China;Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices,Kunming 650223,China)

机构地区：[1]北京理工大学光电学院,北京100081 [2]昆明物理研究所,云南昆明650223 [3]云南省先进光电材料与器件重点实验室,云南昆明650223

出　　处：《红外技术》2022年第9期889-903,共15页Infrared Technology

基　　金：国家重点研发计划(2019YFB2203404);云南省创新团队项目(2018HC020)。

摘　　要：HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向,在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的Hg Cd Te高工作温度红外探测器得到了快速发展,尤其是以势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构为主的器件受到了广泛的研究。本文系统介绍了势垒阻挡型和非平衡工作P~+-π(ν)-N~+结构HgCdTe红外探测器的暗电流抑制机理,分析了制约两种器件结构发展的关键问题,并对国内外的研究进展进行了综述。对多层异质结构Hg CdTe红外探测器的发展进行了总结与展望。The HgCdTe multilayer heterojunction technology is an important direction for the development of mainstream infrared detectors in the future, playing an important role in high-performance infrared detectors,such as high operating temperature(HOT) detectors, dual/multicolor detectors, and avalanche photodiodes(APDs). Recently, HgCdTe HOT infrared detectors based on multilayer heterojunction technology have been developed, particularly devices based on the barrier and non-equilibrium operating P-π(ν)-Nstructure have been widely studied. In this review, the dark current suppression mechanisms of P-π(ν)-Nstructure HgCdTe infrared detectors with barrier and non-equilibrium operations were systematically introduced, the key problems that restrict the development of these two types of devices were analyzed, and the relevant research progress was reviewed. We summarized and assessed the prospects of the development of multilayer heterojunction HgCdTe infrared detectors.

关 键 词：碲镉汞 多层异质结 势垒 非平衡工作 焦平面器件 

分 类 号：TN304.054[电子电信—物理电子学]