锑化物中/中波双色红外探测器研究进展  

Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector

作　　者：张宏飞 朱旭波[2,3,4] 李墨 姚官生[2,3,4] 吕衍秋 ZHANG Hongfei;ZHU Xubo;LI Mo;YAO Guansheng;LYU Yanqiu(Aviation Military Representative Office of Army Armament Department in Luoyang,Luoyang 471099,China;China Airborne Missile Academy,Luoyang 471099,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471099,China;The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province,Luoyang 471099,China)

机构地区：[1]陆装驻洛阳地区航空军代室,河南洛阳471009 [2]中国空空导弹研究院,河南洛阳471099 [3]红外探测器技术航空科技重点实验室,河南洛阳471099 [4]河南省锑化物红外探测器工程技术中心,河南洛阳471099

出　　处：《红外技术》2022年第9期904-911,共8页Infrared Technology

基　　金：航空科学基金项目(20200024012002)。

摘　　要：面对第三代红外探测器对多波段探测的需求,中/中波双色同时获取两个波段的目标信息,对复杂的背景进行抑制,可以有效排除干扰源的影响,提高了探测的准确性,增强了在人工及复杂背景干扰下的目标识别能力,因此中/中波双色探测器设计和制备最近快速发展起来。锑化铟红外探测器通过分光可实现两个中波波段的探测,锑化物Ⅱ类超晶格探测器通过能带结构设计实现多波段探测。本文阐述了锑化物中/中波双色红外探测器的主要技术路线和目前研究进展,与传统InSb双色探测器相比,中/中波双色超晶格红外器件用于红外成像探测具有鲜明的特点和优势,但需要在探测器结构设计、锑化物超晶格材料生长、阵列器件制备等方面进行进一步研究,以提高探测性能,满足工程化应用需求。To meet the demand for third-generation infrared detectors in multi-band detection, a mid-/mid-wavelength dual-color detector can obtain target information in two bands simultaneously and suppress complex background;hence, it can effectively eliminate the influence of interference sources and improve the accuracy of detection, which enhances target recognition under artificial and complex background interference. The design and preparation of mid-/mid-wavelength dual-color detectors have recently developed rapidly. The InSb infrared detector can realize the detection of the mid-/mid-wavelength via light splitting, and the antimonide type-II superlattice detector realizes multi-band detection through the energy band structure design. This paper describes the main technical method and current research progress of antimonide mid-/mid-wavelength dual-color infrared detectors. Compared with traditional InSb dual-color detectors, mid-/mid-wavelength dual-color superlattice infrared devices have distinct characteristics and advantages for infrared imaging detection. However, further research on detector structure design,antimonide superlattice material growth, and array device preparation is required to improve the detection performance and meet the demands of engineering applications.

关 键 词：双色 红外探测器 锑化物 Ⅱ类超晶格 中/中波 

分 类 号：TN215[电子电信—物理电子学]