ATMP作为辅助配位剂对HEDP体系铜电沉积行为的影响  

Effect of ATMP as auxiliary complexing agent on electrodeposition behavior of copper in HEDP bath

作　　者：喻岚 廖志祥 袁景追 张娟 王帅星[2] 杜楠[2] YU Lan;LIAO Zhixiang;YUAN Jingzhui;ZHANG Juan;WANG Shuaixing;DU Nan(AECC Guizhou Honglin Aero-engine Control Technology Corporation Ltd.,Guiyang 550009,China;School of Materials Science and Engineering,Nanchang Hangkong University,Nanchang 330063,China;Hubei Sanjiang Space Jiangbei Mechanical Engineering Co.,Ltd.,Xiaogan 432100,China)

机构地区：[1]中国航发贵州红林航空动力控制科技有限公司,贵州贵阳550009 [2]南昌航空大学材料科学与工程学院,江西南昌330063 [3]湖北三江航天江北机械工程有限公司,湖北孝感432100

出　　处：《电镀与涂饰》2022年第17期1197-1202,共6页Electroplating & Finishing

摘　　要：通过霍尔槽试验、电化学测试、扫描电镜分析和X射线衍射,研究了氨基三亚甲基膦酸(ATMP)作为辅助配位剂时对羟基乙叉二膦酸(HEDP)镀铜体系中铜电沉积行为及镀层结构的影响。结果表明,ATMP可以显著阻碍铜的电沉积,细化镀层晶粒,且具有一定的整平作用,但不会改变Cu的形核方式。ATMP主要作用在高电流密度区,适量ATMP的加入有助于拓宽光亮电流密度范围,降低铜阳极的钝化,但ATMP过量会导致高电流密度区镀层烧焦。镀液中加入9 g/L ATMP时,所得的铜镀层结晶细致均匀,平均晶粒尺寸约为37.5 nm。The effect of amino trimethylenephosphonic acid(ATMP)as an auxiliary complexing agent on the electrodeposition behavior of copper in a 1-hydroxyethylidene-1,1-diphosphonic acid(HEDP)bath and the microstructure of coating prepared were studied by Hull cell test,electrochemical measurements,scanning electron microscopy(SEM),and X-ray diffraction(XRD).The results showed that ATMP had grain refining effect and leveling effect by significantly inhibiting the electrodeposition of copper,but it didn’t change the nucleation mode of copper.ATMP mainly worked at high current density.An appropriate amount of ATMP helped to widen the range of current density for preparing bright copper coatings and reduce the passivation of copper anode,while excessive ATMP would lead to burning of copper coating at high current density.The copper coating electrodeposited with 9 g/L of ATMP in HEDP bath was fine-grained and uniform with an average grain size of about 37.5 nm.

关 键 词：电镀铜 氨基三亚甲基膦酸 羟基乙叉二膦酸 辅助配位剂 电化学分析 

分 类 号：TQ153.14[化学工程—电化学工业]