浮空p柱结构的超结IGBT器件的设计  

Design of a Super-Junction IGBT with Floating p-Pillar Structure

作　　者：吴玉舟 李泽宏[1] 禹久赢 潘嘉 陈冲 任敏[1] Wu Yuzhou;Li Zehong;Yu Jiuying;Pan Jia;Chen Chong;Ren Min(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Shanghai Super Semiconductor Technology Co.,Ltd.,Shanghai 201203,China;Shanghai Huahong Grace Semiconductor Manufacturing Co.,Ltd.,Shanghai 201203,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]上海超致半导体科技有限公司,上海201203 [3]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《半导体技术》2022年第8期606-611,共6页Semiconductor Technology

基　　金：江苏省重点研发计划项目(BE2020010)。

摘　　要：针对传统结构超结IGBT器件在大电流应用时的电导调制效应较弱,削弱了IGBT器件低饱和导通压降优点的问题,设计了p柱浮空的超结IGBT器件(FP-SJ-IGBT)。采用深槽刻蚀和回填工艺制备了p柱和p体区分离的超结IGBT器件。测试结果表明,该器件击穿电压高于660 V,在导通电流20 A时,其饱和导通压降为1.7 V,相比于传统超结IGBT器件更低,关断能量为0.23 mJ,远低于传统超结IGBT器件的3.3 mJ,较低的导通压降和关断能量使得FP-SJIGBT器件的电流密度可达449 A/cm^(2)。此外,在400 V直流母线电压下,FP-SJ-IGBT器件具有不低于10μs的短路时间。In order to solve the problem that the conductivity modulation effect of conventional super-junction(SJ)IGBTs is weak in high current applications,which weakens the advantages of low saturated on-state voltage drop of IGBTs,a SJ-IGBT with floating p-pillar(FP-SJ-IGBT)was designed.The SJ-IGBT with disconnected p-pillar and p-body was fabricated by deep trench etching and refilling process.The test results show that the breakdown voltage of the FP-SJ-IGBT is higher than 660 V.When the conduction current is 20 A,the saturated on-state voltage drop is 1.7 V,which is lower than that of the conventional SJ-IGBT,and the turn-off energy is 0.23 mJ,which is much lower than that of the conventional SJ-IGBT(3.3 mJ).The lower on-state voltage drop and turn-off energy enable the FP-SJ-IGBT to achieve a current density of up to 449 A/cm^(2).In addition,under 400 V DC bus voltage,the short-circuit time of the FP-SJ-IGBT is no less than 10μs.

关 键 词：浮空p柱 超结 IGBT 寄生双极结型晶体管 电导调制 

分 类 号：TN386.2[电子电信—物理电子学]