SPNP晶体管辐照损伤效应的有限元数值模拟  

FINITE ELEMENT SIMULATIONS OF RADIATION DAMAGE EFFECTS OF SUBSTRATE PNP BJTS

作　　者：倪宇晖 张倩茹 王芹 阳莺[1] 卢本卓[2,3] Ni Yuhui;Zhang Qianru;Wang Qin;Yang Ying;Lu Benzhuo(Department of Computational Science and Mathematics,Guangxi Colleges and Universities Key Laboratory of Data Analysis and Computation,Guilin University of Electronic Technology,Guilin 541004,China;LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China;School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]桂林电子科技大学数学与计算科学学院,广西高校数据分析与重点实验室,桂林541004 [2]LSEC,国家数学与交叉科学中心,中国科学院数学与系统科学研究院,计算数学与科学工程计算研究所,北京100190 [3]中国科学院大学数学科学学院,北京100049

出　　处：《数值计算与计算机应用》2022年第3期237-247,共11页Journal on Numerical Methods and Computer Applications

基　　金：国家自然科学基金(11771435,22073110,12161026);广西自然科学基金(2020GXNSFAA159098);桂林电子科技大学数学与计算科学学院研究生优秀学位论文培育项目(2020YJSPYA02)资助。

摘　　要：结合辐照损伤模型和漂移扩散模型,研究辐照效应对衬底PNP (SPNP)双极型晶体管电学性质的影响.基于三维并行自适应有限元平台Parallel Hierarchical Grid (PHG),采用倒数平均有限元法对漂移扩散方程进行离散求解.同时,对间断的掺杂分布做了连续化处理,使其更接近于物理实际,也更有利于数值计算的健壮性.数值模拟再现了辐照后SPNP晶体管出现的基极电流增大及电流增益退化现象,并与横向PNP (LPNP)晶体管进行对照,最终得到这两类晶体管对辐照损伤的敏感程度上的差异.The effects of irradiation on Substrate PNP(SPNP) bipolar junction transistors(BJTs)are studied by combining the radiation damage model and the drift-diffusion(DD) model.Based on Parallel Hierarchical Grid(PHG),a three-dimensional parallel adaptive finite element platform,the DD model is solved by an inverse averaging finite element method.The discontinuous doping distribution is treated as continuous one to make it closer to the physical reality,and beneficial to the robustness of numerical calculation.The phenomenon of the base current increase and the current gain degradation for irradiated SPNP BJTs are simulated.Through comparing SPNP BJTs with Lateral PNP(LPNP) BJTs,differences between the sensitivity of these two types of BJTs to radiation damage are obtained.

关 键 词：SPNP晶体管 漂移扩散模型 辐照损伤模型 倒数平均有限元 

分 类 号：TN322.8[电子电信—物理电子学]