多晶硅生产回收氢气中杂质来源及控制措施  

Sources and Control Measures of Impurities in Hydrogen Recovery from Polysilicon Production

作　　者：袁川江 文林 Yuan ChuanJiang;Wen Lin(Yunnan Tongwei High Purity Silicon Co.,Ltd.,Baoshan 678000,China;Yunnan Energy Investment Silicon Material Technology Development Co.,Ltd.,Qujing 655000,China)

机构地区：[1]云南通威高纯晶硅有限公司,云南保山678000 [2]云南能投硅材科技发展有限公司,云南曲靖65500

出　　处：《云南化工》2022年第9期98-100,共3页Yunnan Chemical Technology

摘　　要：介绍了多晶硅生产回收H_(2)中杂质的主要来源。针对难以去除的杂质,通过采用降低冷凝温度、优化HCl解析操作、采用特殊吸附剂并强化吸附效果等方法进行了去除,对提高回收氢气纯度,从而提高多晶硅产品质量具有重要意义。The main sources of impurities in H_(2)recovery from polysilicon production are introduced.In view of the impurities that can not be removed,the methods such as reducing condensation temperature,optimizing HCl analytical operation,adopting special adsorbent and strengthening adsorption effect can be used to remove the impurities,it is of great significance to improve the quality of hydrogen recovery products and thus the quality of polysilicon products.

关 键 词：多晶硅 回收氢 杂质 控制措施 

分 类 号：TQ264.1[化学工程—有机化工]