Qplus传感器工艺误差影响的仿真分析  被引量:2

Simulation analysis on influence of Qplus sensor process error

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作  者:李磊 张明烨 冷兴龙[2,3,4] 张凌云 夏洋 刘涛 LI Lei;ZHANG Mingye;LENG Xinglong;ZHANG Lingyun;XIA Yang;LIU Tao(University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Beijing Research Center of Engineering and Technology of Instrument and Equipment for microelectronics fabrication,Beijing 100176,China;Beijing Key Laboratory of IC Test Technology,Beijing 100084,China)

机构地区:[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]北京市微电子制备仪器设备工程技术研究中心,北京100176 [4]集成电路测试技术北京市重点实验室,北京100084

出  处:《传感器与微系统》2022年第10期5-9,共5页Transducer and Microsystem Technologies

基  金:国家重点研发计划基金资助项目(2018YFA0704804);中科院关键技术团队基金资助项目(GJJSTD20200003,GJJSTD20200005)。

摘  要:为了探究微纳加工中的工艺误差对Qplus传感器性能指标的影响,采用基于COMSOL的多物理场有限元数值分析方法建立了包含工艺误差的Qplus传感器仿真模型,评估了湿法刻蚀后侧壁产生的晶棱、双面光刻对准偏差等典型工艺误差对传感器本征频率、弹性系数以及品质因子的影响,并将仿真结果与实测值进行了对比,验证了仿真方法的准确性。结果表明:传感器的弹性系数及本征频率会因为湿法刻蚀后侧壁产生的晶棱明显提高,品质因子受工艺误差影响较小,变化幅度小于10%。分析方法有助于Qplus传感器的设计优化,使制备出的传感器性能参数更接近于预期设计值,同时为其他基于石英的MEMS传感器的仿真设计提供借鉴。In order to explore the influence of process errors in micro-nano processing on the performance of the Qplus sensor, multiphysics field finite element numerical analysis method based on COMSOL is used to establish Qplus sensor simulation model including process errors and the influence of typical process errors such as the sidewall etching residue and alignment deviation of double-sided lithography on intrinsic frequency, elastic coefficient and quality factor of sensor is evaluated and the simulation results are compared with the measured values to verify the accuracy of the simulation method.The results show that the elastic coefficient and intrinsic frequency of the sensor will be significantly increased due to the crystal ridges produced on the sidewall after wet etching, the quality factor is less affected by the process error, and the variation range is less than 10 %.The analysis method is helpful to the design optimization of the Qplus sensor, making the performance parameters of the prepared sensor closer to the expected design value, and at the same time providing a reference for the simulation design of other quartz-based MEMS sensors.

关 键 词:Qplus传感器 微电子机械系统 工艺误差 有限元仿真 石英单晶 原子力显微镜 

分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置] TN384[自动化与计算机技术—控制科学与工程]

 

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