基于重叠栅工艺的硅量子点阵列的制备与调控  

Fabrication and Tuning of Silicon Quantum Dot Array with Overlapping Gates

作　　者：孙中海 王保传 王宁 刘汉伟 曹刚 李海欧 郭国平[1,2] SUN Zhonghai;WANG Baochuan;WANG Ning;LIU Hanwei;CAO Gang;LI Haiou;GUO Guoping(CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;Origin Quantum Computing Company Limited,Hefei 230093,China)

机构地区：[1]中国科学技术大学,中国科学院量子信息重点实验室,合肥230026 [2]本源量子计算科技有限责任公司,合肥230093

出　　处：《低温物理学报》2022年第3期165-172,共8页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:12034018)资助的课题.

摘　　要：利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.Utilizing semiconductor quantum dot arrays to achieve nearest-neighbor coupling is one of the main approaches for scaling up spin qubits.However,as the number of quantum dots increases,the device design,fabrication,and parameters tuning of the quantum dot array face great challenges.Here,we introduce an overlapping-gates structure,which uses multiple layers of overlapping gates to define quantum dots and provides a promising technique for quantum dots scaling.We successfully fabricate compact and well-tuned quantum dot array devices with this structure.In addition,we develop a tuning method with high efficiency and reliability,which realizes the independent control of quantum dot parameters by establishing virtual gates,and the number of electrons in each quantum dot can be efficiently and independently tuned.These methods overcome the difficulty of parameter configuration in large-scale quantum dot arrays and provide a standardized scheme for realizing large-scale spin qubit array in the future.

关 键 词：硅量子点 量子点阵列 电容耦合 虚拟电极 

分 类 号：O471.1[理学—半导体物理]