h-BN/Al_(2)O_(3)栅介质氢终端金刚石场效应晶体管  

Hydrogen-Terminated Diamond Field Effect Transistors with h-BN/Al2O3 Gate Dielectric

作　　者：王维 蔚翠[1,2] 何泽召[1,2] 周闯杰 郭建超 马孟宇 高学栋 冯志红[1,2] Wang Wei;Yu Cui;He Zezhao;Zhou Chuangjie;Guo Jianchao;Ma Mengyu;Gao Xuedong;Feng Zhihong(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2022年第9期687-691,724,共6页Semiconductor Technology

摘　　要：金刚石是实现高频大功率器件的理想候选材料,但是其较低的载流子迁移率制约了器件的性能,六方氮化硼(h-BN)作为氢终端金刚石场效应晶体管(FET)的栅介质材料有望提升金刚石材料的载流子迁移率。利用商业化大面积h-BN材料,制备了h-BN/Al_(2)O_(3)栅介质的氢终端金刚石FET,h-BN/Al_(2)O_(3)/氢终端金刚石材料的载流子迁移率得到提升,达到186 cm^(2)/(V·s)。相较于Al_(2)O_(3)栅介质的金刚石FET,h-BN/Al_(2)O_(3)栅介质的金刚石FET最大饱和电流密度和最大跨导均得到提升,分别为141 mA/mm和9.7 mS/mm。通过电容-电压(C-V)测试计算了栅介质和金刚石间界面固定电荷密度和陷阱密度,h-BN/Al_(2)O_(3)栅介质的金刚石FET界面负固定电荷密度为5.4×10^(12)cm^(-2)·eV^(-1),低于Al_(2)O_(3)栅介质的金刚石FET(8.5×10^(12)cm^(-2)·eV^(-1))。固定电荷密度低、载流子迁移率高是h-BN/Al_(2)O_(3)栅介质金刚石FET性能提升的主要原因。Diamond is a promising candidate material for high frequency and high power devices.The low carrier mobility limits the performance of the devices,and hexagonal boron nitride(h-BN)used as a gate dielectric material of hydrogen-terminated diamond field effect transistors(FETs)is helpful for the improvement of carrier mobility of the diamond material.Commercial h-BN with large scale was used to fabricate hydrogen-terminated diamond FETs with h-BN/Al_(2)O_(3)as gate dielectric.The carrier mobility of hydrogen-terminated diamond with h-BN/Al_(2)O_(3) was improved to 186 cm^(2)/(V·s).Compared with the diamond FETs with Al_(2)O_(3) as gate dielectric,both of the maximum saturation current density(141 mA/mm)and maximum transconductance(9.7 mS/mm)of the diamond FETs with h-BN/Al_(2)O_(3) gate dielectric were improved.The interface fixed charge and trap densities in the diamond and gate dielectric were calculated by capacity-voltage(C-V)measurements.The negative fixed charge density is 5.4×10^(12)cm^(-2)·eV^(-1)for the diamond FET with h-BN/Al_(2)O_(3) gate dielectric,which is lower than that of the diamond FET with Al_(2)O_(3) gate dielectric(8.5×10^(12)cm^(-2)·eV^(-1)).The low fixed charge density and high carrier mobility are the main reasons for the improved performances of diamond FETs with h-BN/Al_(2)O_(3) gate dielectric.

关 键 词：金刚石 场效应晶体管(FET) 氢终端 六方氮化硼(h-BN) 栅介质 

分 类 号：TN386[电子电信—物理电子学]