一种双面散热SiC MOSFET功率模块的设计与测试  

Design and Test of a Double-Sided Cooling SiC MOSFET Power Module

作　　者：谭羽辰 任宇 田世鹏 田明玉 Tan Yuchen;Ren Yu;Tian Shipeng;Tian Mingyu(College of Electrical and Power Engineering,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学电气与动力工程学院,太原030024

出　　处：《半导体技术》2022年第9期725-731,共7页Semiconductor Technology

摘　　要：现有的SiC模块大多沿用传统的基于硅基模块的封装,难以支持SiC芯片在高温、高频下的应用。为了进一步发挥SiC芯片的性能,设计了一款双面散热半桥模块。模块内部由SiC MOSFET芯片与金属垫片构成,在实现双面散热的同时完全消除了键合线,提高了可靠性,降低了寄生参数。首先,通过ANSYS Q3D EXTRACTOR软件提取模块的寄生参数,结果表明模块功率回路的寄生电感为5.45 nH。利用多物理场仿真软件COMSOL证实该双面散热结构相比传统的单面散热结构能够减少30%的芯片结温。随后展示了模块的制备工艺流程。最后,动、静态实验测试结果表明该模块具有良好的动态与静态特性。Most of the existing SiC modules use the conventional silicon-based module package,which is difficult to support applications of SiC chips at high temperature and high frequency.In order to improve the performance of SiC chips,a double-sided cooling half-bridge module was designed.The module consists of SiC MOSFET chips and metal plates,which can realize double-sided cooling and eliminate bonding wires simultaneously,and improve reliability and reduce parasitic parameters.Firstly,parasitic parameters of the module were extracted by ANSYS Q3 D EXTRACTOR software.The results show that the parasitic inductance of the module power loop is 5.45 nH.Multi-physics field simulation software COMSOL was used to verify that the chip junction temperature of the double-sided cooling structure could be reduced by 30%than that of the conventional single-sided cooling structure.Then,the fabrication process flow was presented.Finally,the dynamic and static test results show that the module has good dynamic and static characteristics.

关 键 词：SiC MOSFET 功率模块 双面散热结构 寄生电感 有限元仿真 

分 类 号：TN432[电子电信—微电子学与固体电子学]