5~20GHz具有正斜率增益的超宽带放大器  

5-20GHz Ultra-Wideband Amplifier with Positive Gain Slope

作　　者：蔡晓波[1] 汪粲星 张浩[1,2] Cai Xiaobo;Wang Canxing;Zhang Hao(The 14^(th)Research Institute,CETC,Nanjing 210039,China;Purple Mountain Laboratories,Nanjing 211111,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039 [2]网络通信与安全紫金山实验室,南京211111

出　　处：《半导体技术》2022年第9期732-736,754,共6页Semiconductor Technology

摘　　要：在宽带相控阵系统中,随着频率的增加,开关、移相器、衰减器等无源元件的插入损耗随着频率增加而增大,即具有负斜率增益。无源元件的负斜率增益特性使得宽带相控阵系统的增益不平坦。针对这个问题,提出了一款5~20 GHz具有正斜率增益的超宽带放大器,用于补偿无源元件在宽频带内的负斜率增益,以取得相控阵系统整体增益平坦的效果。该超宽带放大器采用三级分布式放大器结构,并采用共发射极共集电极级联结构以取得更高的增益。同时,使用基于发射极的并联RC网络的反馈技术,实现了增益的正斜率。该放大器采用0.13μm SiGe BiCMOS工艺设计并流片。测试结果表明,在5、15和20 GHz时放大器增益分别为9.8、16.0和18.1 dB。在5~20 GHz频率范围内,该放大器具有8.3 dB的增益补偿能力,带内噪声系数最小值为3.7 dB,输入、输出回波损耗均小于-10 dB,1 dB压缩点输出功率大于8.5 dBm,芯片面积为0.70 mm×0.94 mm。In wideband phased-array systems,the insertion loss of passive components such as switches,phase shifters and attenuators,increases with the increase of frequency.This phenomenon means that those passive components have negative gain slope which resulting in the gain fluctuation of broadband phased array.In order to compensate the negative gain slope of passive components over a wide frequency band,a 5-20 GHz ultra-wideband amplifier with positive gain slope was proposed.By this means,the phased-array system with no gain fluctuation can be achieved.The proposed amplifier consists of three stages and is based on distributed amplifier topology.In order to improve the gain,all stages were implemented with common emitter and common collector cascade structure.Besides,the feedback technique in emitter based on shunt RC network was utilized to realize the positive gain slope.The proposed ultra-wideband amplifier was designed and fabricated in 0.13μm SiGe BiCMOS technology.The measurement results show that the gain of the amplifier is 9.8,16.0 and 18.1 dB at 5,15 and 20 GHz,respectively.Therefore,the amplifier can compensate the gain fluctuation of 8.3 dB at 5-20 GHz.The minimum in-band noise figure is 3.7 dB,the input and output return loss is<-10 dB,and the output power at 1 dB compression point is>8.5 dBm,and the chip area is 0.70 mm×0.94 mm.

关 键 词：分布式放大器 超宽带 正斜率增益 锗硅(SiGe) 相控阵 

分 类 号：TN433[电子电信—微电子学与固体电子学] TN722.16