一种四通道高压抗辐射12位DAC  

A Radiation Hardened Four Channel High Voltage 12-bit DAC

作　　者：王忠焰 胡永菲 髙炜祺 WANG Zhongyan;HU Yongfei;GAO Weiqi(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2022年第4期582-586,共5页Microelectronics

基　　金：模拟集成电路国家级重点实验室基金资助项目(614280205020417)。

摘　　要：基于0.6μm高低压兼容CMOS工艺,设计并实现了一种四通道高压抗辐射电压输出型数模转换器(DAC)。采用R-2R梯形网络和高压折叠共源共栅运放作为缓冲输出,保证了DAC良好的单调性,提高了抗辐射能力。该DAC芯片尺寸为5.80 mm×3.70 mm。测试结果表明,在正负电源电压分别为±5 V时,DAC的输出范围达到-2.5~2.5 V,功耗为26.95 mW,DNL为0.41 LSB,INL为0.34 LSB,输出建立时间为6.5μs,INL匹配度为0.11 LSB。A quad high voltage radiation hardened voltage output 12-bit DAC was designed and implemented in a 0.6μm standard CMOS process with high and low voltage devices.The R-2R ladder network and high-voltage multistage folding-cascode operational amplifier which operated as a buffer output was proposed.This structure realized the good monotonicity of DAC and improved its radiation resistance.The chip size was 5.80 mm×3.70 mm.The test results showed that the output range of the DAC was-2.5~2.5 V,the power consumption was 26.95 mW,the DNL was 0.41 LSB,the INL was 0.34 LSB,the settling time was 6.5μs,and the INL compatibility was 0.11 LSB at±5 V power supply.

关 键 词：高压DAC MOS管阈值 NMOS管环栅 总剂量辐射 

分 类 号：TN792[电子电信—电路与系统]