GaAs基PHEMT低噪声放大器的强电磁脉冲效应与机理  

Electromagnetic Pulse Effect and Mechanism of GaAs Based PHEMT Low Noise Amplifier

作　　者：安琪 柴常春[1] 李福星 吴涵 杨银堂[1] AN Qi;CHAI Changchun;LI Fuxing;WU Han;YANG Yintang(School of Microelectronics,Xidian University,Key Laboratoty of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices:Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,教育部宽禁带半导体材料与器件国家重点实验室,西安710071

出　　处：《现代应用物理》2022年第3期141-149,共9页Modern Applied Physics

基　　金：国家自然科学基金资助项目(61974116)。

摘　　要：利用Sentaurus TCAD仿真工具,建立了一种基于GaAs赝配高电子迁移率晶体管的共源极低噪声放大器电路模型,通过在电路输入端口注入高功率微波,讨论了器件内部峰值温度、电场强度、电流密度和碰撞电离率等物理参数的变化,分析了器件的烧毁机理。进一步讨论了不同信号参数和端口外接电阻对器件损伤效应的影响。结果表明,电流焦耳热累积导致低噪声放大器电路中晶体管栅极下方偏漏极一侧发生烧毁,烧毁时间随注入信号功率的增大而减小,随注入信号频率的增大而增大;此外,晶体管端口外接电阻会减弱传入器件内部的能量,进而减缓器件的损伤进程,提高电路对电磁脉冲的耐受性,与漏极相比,源极外接电阻对损伤进程的减缓效果更强。By using the simulation tool Sentaurus TCAD,a circuit model of a common source very low noise amplifier based on GaAs pseudomorphic high-electron-mobility-transistor is established.By injecting high power microwave pulse into the input port of the circuit,the changes of physical parameters such as internal peak temperature,electric field strength,current density,and collision ionization rate of the device are discussed,and the burning mechanism of the device is analyzed.In addition,the effects of different signal parameters and port external resistance on the damage effect of the device are also discussed.The results show that the current Joule heat accumulation leads to the burnout of the bias drain side below the transistor gate in the low noise amplifier circuit.The burnout time decreases with the increase of injection signal power and increases with the increase of injection signal frequency.The external resistance of the transistor port will weaken the internal energy entering the device,thus delaying down the damage process of the device and improving the resistance of the circuit to electromagnetic pulse.The results show that the external resistance of the source has a stronger slowing effect on the damage process than that of the drain.

关 键 词：GaAs赝配高电子迁移率晶体管 高功率微波 电磁脉冲 低噪声放大器 损伤效应 

分 类 号：TN322[电子电信—物理电子学] TL99[核科学技术—核技术及应用]