碳化硅晶圆切割方法综述  

Review of silicon carbide wafer cutting methods

作　　者：邹苗苗 窦菲 ZOU Miaomiao;DOU Fei(School of Applied Mathematics and Physics,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学应用数理学院,北京100124

出　　处：《超硬材料工程》2022年第3期35-41,共7页Superhard Material Engineering

基　　金：国家自然基金项目(11504011)。

摘　　要：碳化硅在功率器件的制造中具有巨大的应用价值,随着高功率半导体市场份额的不断增加,超薄大直径碳化硅晶圆的需求量日益增加。但是由于碳化硅是典型的硬脆性材料,晶圆切割的难度大,而且切割成本占晶圆生产总成本的50%,因此需要研究碳化硅晶圆切割方法以降低生产成本,提高材料利用率。文章系统总结了碳化硅晶圆的切割方法,介绍了线锯切割、激光热裂法、激光隐形切割碳化硅晶圆的原理和优缺点,最后论述了碳化硅激光隐形切割法研究的进展以及目前所面临的挑战,并且提出了该方法在未来的碳化硅晶圆切割领域将具有广阔的应用前景。Silicon carbide has great application value in the manufacture of power devices.With the increasing market share of high-power semiconductor,the demand for ultra-thin and large-diameter silicon carbide wafer is increasing.However,silicon carbide is a typical hard and brittle material,silicon carbide wafer cutting is difficult,and the cutting cost accounts for 50%of the total cost of wafer production,so it is necessary to study silicon carbide wafer cutting method to reduce the production cost and improve the utilization rate of materials.This paper systematically summarizes the cutting methods of silicon carbide,including the wire saw cutting,laser thermal splitting method and laser stealth dicing.Finally,the paper has discussed the progress and current challenges of laser stealth dicing of silicon carbide.It is pointed out that the method will have a broad application prospect in the field of silicon carbide wafer cutting in the future.

关 键 词：碳化硅 晶圆切割 线锯法 激光热裂法 隐形切割 

分 类 号：TQ164[化学工程—高温制品工业]