掩膜版线状mura的控制方法  

The Control Method of Linear Mura for Photomask

作　　者：司继伟 刘玉闯 林伟 Si Ji-wei;Liu Yu-chuang;Lin Wei(Shenzhen Newway Photomask Making CO.,LTD,Guangdong Shenzhen 518057)

机构地区：[1]深圳市路维光电股份有限公司,广东深圳518057

出　　处：《电子质量》2022年第9期139-142,共4页Electronics Quality

摘　　要：在分析掩膜版出现线状mura主要是由于图形关键尺寸(critical dimension,CD)精度周期性波动的基础上,深入分析了光刻设备的曝光原理以及掩膜版光刻过程,得出导致掩膜版图形CD精度周期波动的因素,主要是扫描带(scanstrip)与扫描带之间重叠区域(overlap)的能量与扫描带内的能量差异所致。基于此,给出了几种可以减弱掩膜版线状mura现象的方法,并深入分析了每种方法适用的情景及限制条件,从而可以根据具体的光刻图形,来选取合适的线状mura控制方法,以期在最大程度上减少掩膜版线状mura的问题。Based on the founding that periodic fluctuation of pattern CD accuracy result in linear mura, then make in-depth analysis the principle of exposure system and lithography process, it is concluded that lead to periodic fluctuation of pattern CD accuracy main factors, which is the differences energy between overlap area and inner of scanning belt. On this basis, several methods that can reduce linear mura phenomenon are presented, the applicable situation and limiting conditions of each method are analyzed in depth as well, so as to select the appropriate mura control method according to the specific lithography pattern reduced linear mura phenomenon to the hilt.

关 键 词：掩膜版 线状mura mura控制 关键尺寸均匀性 

分 类 号：TN873.93[电子电信—信息与通信工程]