薄膜微结构换能元温度测量技术研究  

Study on Temperature Measurement of Film Microstructure Energy Conversion Components

作　　者：张一中 韦学勇[1] 张国栋[1] 赵玉龙[1] 平川[2] 张蕊[2] 任炜[2] ZHANG Yizhong;WEI Xueyong;ZHAGN Guodong;ZHAO Yulong;PING Chuan;ZHANG Rui;REN Wei(State Key Laboratory for Manufacturing Systems Engineering,Xi’an Jiaotong University,Xi’an Shaanxi 710054,China;State Key Laboratory for Applied Physics and Chemistry,Shaanxi Applied Physics￣Chemistry Research Institute,Xi’an Shaanxi 710061,China)

机构地区：[1]西安交通大学机械制造系统工程国家重点实验室,陕西西安710054 [2]陕西应用物理化学研究所应用物理化学国家级重点实验室,陕西西安710061

出　　处：《传感技术学报》2022年第8期1011-1017,共7页Chinese Journal of Sensors and Actuators

基　　金：装备预研领域基金项目(61406190504)。

摘　　要：为了适应火工品微型化、集成化和智能化等发展趋势,薄膜微结构换能元的引发温度测试已成为一项亟需解决的关键问题。采用MEMS技术将薄膜铂电阻和薄膜微结构换能元集成在氮化硅基底上,利用原子力显微镜等设备对薄膜铂电阻的几何尺寸进行了表征,通过实验测量了薄膜微结构换能元在不同直流激励下铂电阻的阻值变化,从而得到了薄膜微结构换能元的温度响应曲线。此外,测得斯蒂芬酸铅的点火温度平均为318℃,与理论值330~350℃接近,验证了将薄膜铂电阻与薄膜微结构换能元集成于一体测量微小尺寸条件下发火温度的可行性与有效性。In order to meet the development trend of miniaturization,integration and intelligence of initiating explosive devices,the temperature measurement of film microstructure energy conversion components has become an urgent problem to be solved.The thin-film platinum resistance temperature detectors(PtRTDs)and film microstructure energy conversion components are integrated on a silicon nitride substrate using the MEMS technology.The geometric dimensions of Pt RTDs are characterized by using AFM.The resistance changes of Pt RTDs under different DC excitations are measured and the temperature response curve of the film microstructure energy conversion component is obtained.The test results show that the average initiation temperature of lead stiphenate is 318℃,which is close to the theoretical value of 330℃~350℃.This testifies the feasibility and effectiveness of the integration of Pt RTDs and film microstructure energy conversion components to measure the initiation temperature in small sizes.

关 键 词：MEMS火工品 引发温度 薄膜微结构换能元 薄膜铂电阻 

分 类 号：TN44[电子电信—微电子学与固体电子学]