大电流下SiC MOSFET功率模块的驱动器研究  

Research on Driver of SiC MOSFET Module with High Current

作　　者：温传新 朱金大[1] 武迪 云阳 程远[2] 杜博超[2] WEN Chuanxin;ZHU Jinda;WU Di;YUN Yang;CHENG Yuan;DU Bochao(Guodian Nari Technology Co.,Ltd.,Nanjing 211106,Jiangsu,China;School of Electrical Engineering and Automation,Harbin Institute of Technology,Harbin 150001,Heilongjiang,China)

机构地区：[1]国电南瑞科技股份有限公司,江苏南京211106 [2]哈尔滨工业大学电气工程及自动化学院,黑龙江哈尔滨150001

出　　处：《电气传动》2022年第20期37-43,共7页Electric Drive

基　　金：国电南瑞集团项目(524608190055)。

摘　　要：由于碳化硅(SiC)MOSFET具有高频、低损耗、高耐温特性,在提升新能源汽车逆变器效率和功率密度方面具有巨大优势。对于SiC MOSFET功率模块,研究大电流下的短路保护问题、高开关速度引起的驱动振荡问题尤为重要。针对这些问题,设计了大电流下SiC MOSFET功率模块的驱动器,包括电源电路、功率放大电路、短路保护电路、有源米勒钳位电路和温度检测电路。在分析了驱动振荡机理后,通过有限元软件提取了驱动回路的寄生电感,优化驱动回路布局,使得开通与关断回路杂散电感分别降低到6.50 nH和5.09 nH。最后,以Cree公司的1200 V/400 A CAB400M12XM3功率模块为测试对象,利用双脉冲实验验证了所设计驱动电路的合理性及短路保护电路的可靠性,对于800 A的短路电流,可以在1.640μs内实现快速短路保护。Silicon carbide(SiC)MOSFET has great advantages in improving efficiency and power density of inverter for new energy vehicles,due to its advantages as high frequency,low loss and high junction temperature.For the SiC MOSFET module,it is very important to study the short-circuit protection with high current,and the driving oscillation caused by high switching speed.In order to solve these problems,the driver of SiC MOSFET module with high current was designed,which includes power supply circuit,power amplifier circuit,short circuit protection circuit,active Miller clamp circuit and temperature detection circuit.After analyzing the drive oscillation mechanism of SiC MOSFET,the finite element software was used to extract the parasitic inductance of the drive circuit,and the layout design of the drive circuit was optimized.The stray inductances of the open and closed loops were reduced to6.50 nH and 5.09 nH.Finally,the Cree’s 1200 V/400 A CAB400M12XM3 power module was used for experiment.The rationality of driver and the reliability of short-circuit protection were verified through double pulse experiment.When the short circuit current is equal to 800 A,fast short-circuit protection can be achieved within 1.640μs.

关 键 词：碳化硅MOSFET 驱动器 短路保护 驱动振荡 双脉冲实验 

分 类 号：TM46[电气工程—电器]