掺铒Ge-Ga-Se波导放大器研究  

Research on Erbium-doped Ge-Ga-Se Waveguide Amplifier

作　　者：魏腾秀 杨振 邬健 孙元欢 王荣平 WEI Tengxiu;YANG Zhen;WU Jian;SUN Yuanhuan;WANG Rongping(Laboratory of Infrared Material and Devices,Advanced Technology Research Institute,Ningbo University,Ningbo,Zhejiang 315211,China)

机构地区：[1]宁波大学高等技术研究院红外材料与器件实验室,浙江宁波315211

出　　处：《光子学报》2022年第9期109-117,共9页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2020YFB1805900);浙江省宁波市3315创新团队项目。

摘　　要：用磁控溅射法制备了不同浓度的高质量掺铒Ge-Ga-Se薄膜。用X射线衍射仪、拉曼以及荧光光谱测量了薄膜的结构和光学性质,当掺杂铒浓度为约1 at.%时,退火薄膜显示出强的光致发光和0.98 ms的荧光寿命。用COMSOL Multiphysics软件包优化了脊型硫系波导的结构参数,在薄膜总厚度为600 nm、刻蚀深度为200 nm时,2μm和4μm宽的脊型波导中传输光能够最大限度地与稀土有源层之间产生相互作用。根据设计的结构参数,通过控制刻蚀气体流量比,在CHF_(3)∶CF_(4)=20∶10、总的刻蚀气压为0.8 Pa、刻蚀功率为500 W的最优的刻蚀条件下,制备出侧壁光滑、形貌良好的脊型硫系波导;用截断法测得了1310 nm处的传播损耗为1.7 dB/cm,2.8 cm长的波导在1.55μm处的增益为6.7 dB。结果表明稀土掺杂硫系波导作为片上光学放大器件具有良好的应用前景。An optical amplifier is one of the indispensable elements in the modern telecommunication system.At present,there are two main ways to realize on-chip optical waveguide amplifiers:one is based on traditional semiconductor optical amplifiers,and the other is erbium-doped planar optical waveguide amplifiers.For the latter one,erbium-doped films are deposited on a silicon wafer,and then further patterned into a planar optical waveguide by microfabrication,and signal amplification in the 1.55μm communication band is achieved via the emission from the transition between different energy levels of erbium ions.This erbium-doped planar optical waveguide amplifier is easier to integrate with other optical components,enabling natural internal connections between on-chip optical components.It is extremely valuable and has gradually become a research hotspot in the area of integrated photonics worldwide in recent years.Due to the high refractive index and low phonon energy of chalcogenide materials,Er^(3+)-doped chalcogenide glass materials have attracted attention for many years as gain media.However,only a few works have investigated erbium-doped GeGaSe films and waveguides,where the chemical composition of the host material has not been optimized.Here,a Ge_(26.67)Ga_(8)Se_(65.33)target with a stoichiometric composition and a metal Er target with a purity of 99.99%were co-sputtered.By adjusting the sputtering power of the erbium target,films with different erbium-doped concentrations were obtained.The structure of the thin films was characterized by X-Ray Diffraction(XRD)and confocal Raman microscopy,confirming amorphous nature of the as-prepared and annealed films.Optical microscopy and scanning electron microscopy observation indicated that the films have smooth surfaces and negligible droplets without any surface cracks.FLS980 transient/steady-state spectrometer was used to measure the fluorescence spectra of the annealed Erbium-doped thin films in the near-infrared(1.55μm).It was found that the annealed films exhibit

关 键 词：光学放大器 脊型波导 射频溅射 GeGaSe 光学特性 

分 类 号：TN252[电子电信—物理电子学]