一种有效的带封装进行缺陷定位的技术研究  

A technique of locating failed spot on devices with encapsulation

作　　者：涂刚强 吴运熹 雍俐培 TU Gang-qiang;WU Yun-xi;YONG Li-pei(CR micro(Chongqing))

机构地区：[1]华润微电子(重庆)有限公司

出　　处：《中国集成电路》2022年第9期79-84,共6页China lntegrated Circuit

摘　　要：提出了一种基于塑料封装器件进行缺陷定位的分析方案,并且以T0-247封装的功率器件为例详细阐述了带封装进行缺陷定位的过程与方法。通过精密研磨、抛光、激光等先进制样手段减薄塑封料,并用显微红外热成像技术实现器件缺陷定位,从而确定器件的失效模式与失效机理。实验证明该方法切实有效,这种失效分析方法对优化封装流程以及提升良率和可靠性都有重要的参考意义。A failure analysis process of locating failed spots on encapsulated devices was put forward,using TO-247encapsulation format power MOSFET as an example to elaborate this process in detail.By thinning down a device through grinding,polish or laser,then locating the failed spot using thermal technology,it can then reveal fail mode of the device.The effectiveness of this technique was insured by various experiences,proving underlying potential to improve encapsulation procedure along with yield and reliability.

关 键 词：封装 减薄 失效分析 缺陷定位 红外显微镜 

分 类 号：TN405[电子电信—微电子学与固体电子学]