化学气相沉积法制备石墨烯的转移技术研究进展  

Research progress in transfer method of rGO film prepared by CVD

作　　者：陈天山 宋文轩 胡天娇 李义和[1] Chen Tianshan;Song Wenxuan;Hu Tianjiao;Li Yihe(College of Literature Arts and Science,National University of Defense Technology,Changsha 410073)

机构地区：[1]国防科技大学文理学院,长沙410073

出　　处：《化工新型材料》2022年第9期266-269,共4页New Chemical Materials

基　　金：国家“973”计划资助项目(613310401);湖南省自然科学基金(2020JJ5654)。

摘　　要：化学气相沉积法能够大面积合成石墨烯,但将生长的石墨烯转移到应用基底上是十分重要的问题。传统转移方法能够将石墨烯转移到特定的基底上,但不可避免有裂缝、残胶和褶皱等不足,综述了石墨烯薄膜的转移和直接在绝缘基底表面生长的方法,并介绍了选择性刻蚀石墨烯生长基底或制造石墨烯纳米孔的新方法和应用前景。The chemical vapor deposition method(CVD)can synthesize graphene(rGO)on large area,but it is a very important problem to transfer the grown rGO to the application substrate.The traditional transfer method can transfer it to specific substrate,but inevitably there are cracks,residual glue and folds and other deficiencies.The transfer of rGO films and the methods of direct growth on the surface of insulating substrates were reviewed,and introduced new methods and application prospects for selectively etching rGO growth substrates or fabricating rGO nanopores.

关 键 词：石墨烯 转移方法 选择性刻蚀 

分 类 号：TQ127.11[化学工程—无机化工]