多量子阱有效折射率偏振相关性研究  

Study on Polarization Dependence of Effective Refractive Index of Multiple Quantum Well

作　　者：姜德隆 缪庆元[1] JIANG Delong;MIAO Qingyuan(School of Electronic Information,Wuhan University,Wuhan 430072,CHN)

机构地区：[1]武汉大学电子信息学院,武汉430072

出　　处：《半导体光电》2022年第4期781-785,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60877039)。

摘　　要：分析了多量子阱材料各参数对其TE模和TM模有效折射率的影响。结果表明:阱数增多,多量子阱有效折射率降低,当量子阱数目大于3时,其有效折射率的变化不明显。垒厚增加,有效折射率略有降低。存在合适的张应变量使TE模和TM模有效折射率峰值波长接近的同时,折射率差值整体最小,偏振相关性最小。据此提出多量子阱材料有效折射率低偏振相关设计方法,并设计出C波段内(1530~1565 nm)折射率低偏振相关的InGaAs/InGaAsP多量子阱材料。研究结果有助于设计实用化的有效折射率低偏振相关量子阱材料。The effects of various parameters on the effective refractive index of TE mode and TM mode of multiple quantum well materials were analyzed.The results show that when the number of wells increases,the effective refractive index of multiple quantum wells decreases.When the number of quantum wells is more than 3,the change of the effective refractive index is not obvious.As the barrier thickness increases,the effective refractive index decreases slightly.There is a suitable amount of tensile strain to make the peak wavelengths of effective refractive index of TE mode and TM mode close,meanwhile the difference between the refractive indices is the smallest as a whole,and the polarization dependence is the smallest.Based on the above analysis,a design method is proposed to realize low polarization dependence of effective refractive index of multiple quantum well and a multiple-quantum well InGaAs/InGaAsP with low polarization dependence of refractive index within C-band(1530~1565 nm)is designed.The research result is helpful for designing practical quantum well materials with low polarization dependence of effective refractive index.

关 键 词：多量子阱 折射率偏振相关 量子阱数 垒厚 应变 

分 类 号：TN304.01[电子电信—物理电子学]