A multihalogenation strategy for ambipolar transistors and high-gain inverters with good noise margin  

多卤化策略构筑双极性晶体管和具有良好噪声容限的高增益反相器

作　　者：Jie Yang Xueli Yang Jinyang Chen Zhiyuan Zhao Yaqian Jiang Mingliang Zhu Junyu Li Kai Chi Shuai Wang Yunlong Guo Yunqi Liu 杨杰;杨学礼;陈金佯;赵志远;蒋雅倩;朱明亮;李俊宇;池凯;王帅;郭云龙;刘云圻(Beijing National Laboratory for Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry Chinese Academy of Sciences,Beijing 100190,China;School of Chemistry and Chemical Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]Beijing National Laboratory for Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry Chinese Academy of Sciences,Beijing 100190,China [2]School of Chemistry and Chemical Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Science Bulletin》2022年第18期1849-1853,M0003,共6页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(61890940,21922511,91833306,and 91833304);the National Key R&D Program of China(2018YFA0703200);the CAS Key Research Program of Frontier Sciences(QYZDY-SSWSLH029);Research Program of the Chinese Academy of Sciences(XDB30000000);the CAS-Croucher Funding Scheme for Joint Laboratories,and the CAS Cooperation Project(121111KYSB20200036)。

摘　　要：Inorganic electronics are mainly based on complementary metal–oxide-semiconductor(CMOS)structures that use both ptype and n-type transistors.The complementary structures have promoted the achievement of logic circuits with low power consumption and good noise margin(NM).Compared with inorganic semiconductors,organic solution-processable ambipolar polymers are promising materials for complementary technology[1,2].Ambipolar polymers as single-component semiconductors in CMOS-like circuits maintain the attraction of low cost and easy fabrication[3].In practical application,CMOS-like circuits are expected to employ ambipolar field-effect transistor(FET)based inverters with high gain and good NM[4].However,high-gain inverters with good NM(Table S1 online)are difficult to achieve due to the lack of ambipolar polymers with balanced hole/electron mobilities(lh/le)and threshold voltages.Ambipolar polymers can be obtained by fine-tuning both the highest occupied molecular orbital(HOMO)and lowest unoccupied molecular orbital(LUMO)levels to match well with work function of Au electrodes(WF,4.7–5.2 eV)[5](Fig.S1a online).However,most polymers based on common acceptors only display unipolar(p-type or n-type)transport due to their wide bandgaps(>1.2 eV)and inappropriate energy levels[6].For example,isoindigo-based polymers generally show p-type semiconducting behaviors owing to their high-lying LUMO levels,which is unfavorable for electron injection(Fig.S1b online).双极性半导体聚合物在有机场效应晶体管(OFETs)和逻辑电路中具有良好的应用前景.本文报道了一种多卤化策略,合成了第一个多卤化环化靛蓝(FClBAI)及其聚合物(PFClBAI-V).PFClBAI-V具有超窄的光学带隙(0.99 eV),其HOMO和LUMO能级分别为-5.40和-3.86 eV.基于PFClBAI-V的OFETs表现出良好的平衡双极性半导体性能,其最大空穴和电子迁移率分别为1.72和1.22 cm^(2)Vs.此外,其p型阈值电压和n型阈值电压非常接近.基于PFClBAI-V的反相器的增益高达136,同时噪声容限达到了68.5%,这些结果是基于双极性聚合物的反相器的最高值之一.上述结果表明多卤化是一种获得平衡双极性晶体管和高性能反相器的有效策略.

关 键 词：双极性晶体管 反相器 阈值电压 电子迁移率 半导体性能 逻辑电路 半导体聚合物 噪声容限 

分 类 号：TN322.8[电子电信—物理电子学] TQ317[化学工程—高聚物工业]