大面阵短波碲镉汞红外焦平面器件研究  

Study on large-area array SW HgCdTe infrared focal plane device

作　　者：龚晓丹[1] 李红福 杨超伟[1] 袁绶章[1] 封远庆 黄元晋 胡旭[1] 李立华[1] Gong Xiaodan;Li Hongfu;Yang Chaowei;Yuan Shouzhang;Feng Yuanqing;Huang Yuanjin;Hu Xu;Li Lihua(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外与激光工程》2022年第9期141-147,共7页Infrared and Laser Engineering

摘　　要：随着红外焦平面技术的发展,大面阵红外焦平面器件在遥感、气象、资源普查和高分辨对地观测卫星上得到了广泛应用。因此,基于第三代红外焦平面技术的超大规模焦平面器件成为国内外研究热点。文中介绍了昆明物理研究所采用n-on-p技术路线成功研制的短波(Short Wave, SW) 2 k×2 k(18μm,像元中心距)碲镉汞红外焦平面器件。短波2 k×2 k碲镉汞红外焦平面器件突破了大尺寸碲锌镉(CdZnTe)衬底制备和大面积液相外延薄膜材料生长技术,衬底尺寸由Φ75 mm增加到Φ90 mm,获得了高度均匀的大面积碲镉汞(HgCdTe)薄膜材料。通过大面阵器件工艺、大面阵倒装互连等技术攻关,最终获得了有效像元率大于99.9%、平均峰值探测率(D^(*))大于4×10^(12)(cm·Hz^(1/2))/W、暗电流密度在1 nA/cm^(2)的高性能短波2 k×2 k(18μm)碲镉汞红外焦平面器件。With the development of infrared focal plane technology, large-area infrared focal plane devices have been widely used in remote sensing, meteorology, resource surveys and high-resolution earth observation satellites. Therefore, based on the third-generation infrared focal plane technology ultra-large-scale focal plane devices are called research hotspots at home and abroad. The short wave(SW) 2 k(18 μm, pixel pitch) mercury cadmium telluride(MCT) infrared focal plane device was reported, which was successfully developed by Kunming Institute of Physics using n-on-p technology. The SW 2 k MCT infrared focal plane device has broken through the preparation of large-size cadmium zinc telluride(CdZnTe) substrates and the growth of large-area liquid phase epitaxy thin film materials. The substrate size was increased from Φ75 mm to Φ90 mm, and a highly uniform large-area Mercury Cadmium Telluride(HgCdTe) thin film material was obtained. By tackling key technologies such as large array device technology and large area array flip-chip interconnect, a high-performance SW 2 k×2 k(18 μm) MCT infrared focal plane device with an operability over 99.9%, average peak detection rate(D) greater than 4×10^(12)(cm·Hz^(1/2))/W and dark current density of 1 nA/cm^(2) was finally obtained.

关 键 词：短波 大面阵 2k 红外焦平面器件 

分 类 号：TN215[电子电信—物理电子学]