分子束外延P-on-N HgCdTe As扩散调控研究  

Study on As diffusion control of MBE-grown P-on-N HgCdTe

作　　者：沈川[1] 杨辽 刘仰融 卜顺栋 王高[1] 陈路[1,2] 何力 SHEN Chuan;YANG Liao;LIU Yang-Rong;BU Shun-Dong;WANG Gao;CHEN Lu;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)

机构地区：[1]中科院上海技术物理研究所红外材料与器件重点实验室,上海200083 [2]国科大杭州高等研究院,浙江杭州310024

出　　处：《红外与毫米波学报》2022年第5期799-803,共5页Journal of Infrared and Millimeter Waves

基　　金：中国科学院青年创新促进会项目;上海市自然科学基金资助项目(21ZR1473500)。

摘　　要：对分子束外延(MBE)生长的原位As掺杂HgCdTe外延材料的热退火造成的As扩散控制进行研究。在较低的退火温度下获得了As扩散长度可控的HgCdTe材料,易于形成符合设计参数的PN结轮廓,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,原位As掺杂HgCdTe的As浓度的大小和纵向分布随着不同的Hg分压而发生改变。并通过理论计算获得了不同Hg分压下的As扩散系数。同时,通过数值模拟对不同As扩散长度的P-on-N器件结构进行了暗电流模拟,验证了As掺杂结深推进工艺的重要性。As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy(MBE)was studied.HgCdTe with controllable As diffusion length is obtained at a lower annealing tempera-ture,which is easy to form a PN junction profile that meets the design parameters.It provides a basis for the subsequent development of new HgCdTe FPA devices.It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process.And through theoretical calculations,As diffusion coefficients under different Hg pressures are obtained.Meanwhile,the dark current simula-tion of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation,which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.

关 键 词：碲镉汞 As扩散 热退火 暗电流 

分 类 号：O471.5[理学—半导体物理] TN305.3[理学—物理]