毫米波肖特基二极管表征和在片测试方法  

Millimeter wave Schottky diode characterization and on-wafer measurement

作　　者：张傲 高建军[3] ZHANG Ao;GAO Jian-Jun(School of Transportation and Civil Engineering,Nantong University,Nantong 226019,China;Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Shanghai 200241,China;School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China)

机构地区：[1]南通大学交通与土木工程学院,江苏南通226019 [2]华东师范大学极化材料与器件教育部重点实验室,上海200241 [3]华东师范大学物理与电子科学学院,上海200241

出　　处：《红外与毫米波学报》2022年第5期856-862,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金重点项目(62034003)。

摘　　要：本文分析了单口和双口毫米波频段肖特基二极管的测试方法并设计了相应的测试版图,计算了截止频率随寄生电阻和零偏本征电容的变化曲线,给出了小信号和大信号等效电路模型。利用两个实际肖特基二极管测试实例对器件的小信号模型参数进行了提取,实验结果表明,在导通和截止的S参数吻合较好。In this paper,the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed,and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.

关 键 词：肖特基二极管 测试 参数提取 小信号模型 

分 类 号：O43[机械工程—光学工程]