W离子注入VO_(2)薄膜结构及红外发射性能研究  

Structural and infrared-emission properties of W ion-implanted VO_(2) films

作　　者：李仁莹 刘霖 李锦潇 吴蕾 吴晓玲[1,2] 郑瑞廷 程国安[1,2] LI Renying;LIU Lin;LI Jinxiao;WU Lei;WU Xiaoling;ZHENG Ruiting;CHENG Guoan(College of Nuclear Science and Technology,Beijing Normal University,100875,Beijing,China;Beijing Radiation Center,100875,Beijing,China)

机构地区：[1]北京师范大学核科学与技术学院,北京100875 [2]北京市辐射中心,北京100875

出　　处：《北京师范大学学报（自然科学版）》2022年第5期686-691,共6页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(12175020,11575025,U1832176)。

摘　　要：探讨了低剂量离子注入技术对VO_(2)薄膜的结构和红外发射性能的影响,发现1×10^(15) cm^(-2)注量的W离子注入掺杂时,会对VO_(2)薄膜的晶体结构产生一定的损伤;经400℃退火处理后部分恢复了薄膜的单斜相晶体结构,且退火处理后,在掺杂W离子、结构缺陷和氧空位的共同作用下,掺杂量0.12%即可使VO_(2)薄膜的相变温度降低8.9℃;掺杂原子数量每增加1%,其相变温度相应变化74.2℃;W离子注入并经退火处理后,VO_(2)薄膜的红外发射率为0.35~0.46,其在低温区间的红外发射率相比未注入薄膜降低了0.14,这大幅度提高了VO_(2)薄膜在低温区的红外隐身性能.Vanadium dioxide(VO_(2)), a typical metal insulator transition material, potentially has wide applications in functional materials due to a change in property before and after phase transition. But such applications are limited by the phase transition temperature of 68.0 ℃. In this work,monoclinic VO_(2)prepared on SiO/Si substrate was doped with low doses of W ions after ion implantation,before the films were annealed. Crystal structure of VO_(2)films was damaged by W ion implantation at 1×10^(15) ions/cm^(2). After annealing at 400 ℃,monoclinic crystal structure of the film was partially recovered. After annealing, phase transition temperature of VO_(2)thin films decreased by8.9 ℃ with doping of 0.12%,the change rate being 74.2 ℃. Infrared emissivity was reduced to 0.46-0.35. Infrared emissivity in low temperature region was 0.14 lower than the original VO_(2)film. These changes greatly improved infrared stealth performance of the film in low temperature region.

关 键 词：二氧化钒 离子注入 钨 红外辐射 

分 类 号：TB34[一般工业技术—材料科学与工程] TB43