基于倒装焊结构的超宽带光电探测器设计  

Design of Ultra Wideband Photodetector Based on Flip Chip Structure

作　　者：王立 严雪峰 黄晓峰[1] 董绪峰 崔大健[1] WANG Li;YAN Xuefeng;HUANG Xiaofeng;DONG Xufeng;CUI Dajian(Chongqing Optoelectronics Research Institute,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《电子技术（上海）》2022年第8期12-14,共3页Electronic Technology

摘　　要：设计并研制一种可用于微波光子链路、超快脉冲测量等领域的倒装焊结构超宽带集成型InGaAs光电探测器。探测器芯片有源区直径为6μm,垂直进光。器件的偏置和阻抗匹配网络集成在AlN载体上,通过倒装焊的方式与芯片混合集成,实现了对寄生参数的控制,达到高速、高效率的目的。实测器件响应度为0.6A/W,-3dB截止频率达到70GHz级别。阐述70GHz级别高性能InGaAs PIN光电二极管芯片的设计和倒装结构寄生参数对频率响应的影响,探讨通过控制寄生参数提升频率响应的方法。In this paper, an ultra wideband integrated In Ga As photodetector with flip chip structure is designed, which can be used in microwave photonic link and ultra fast pulse measurement. The diameter of the active area of the detector chip is 6μm. Vertical light entry. The bias and impedance matching network of the device is integrated on the Al N carrier, and is mixed with the chip by flip chip bonding, which realizes the control of parasitic parameters and achieves the purpose of high speed and high efficiency. The measured device response is 0.6 A/W, and the-3dB cutoff frequency reaches 70GHz. The design of High Performance In Ga As PIN photodiode chip at 70GHz and the influence of parasitic parameters of flip chip structure on frequency response are described. The method of improving frequency response by controlling parasitic parameters is discussed.

关 键 词：光电探测器 倒装焊 超宽带 垂直入射 

分 类 号：TN36[电子电信—物理电子学]