后退火时间对磁控溅射制备β-Ga_(2)O_(3)薄膜材料的影响  

Effect of post-annealing time on β-Ga_(2)O_(3) thin film prepared by magnetron sputtering

作　　者：杨赉 高灿灿 杨发顺[1,2,3] 马奎 YANG Lai;GAO Can-Can;YANG Fa-Shun;MA Kui(Department of Electronics,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics of Guizhou Province,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学电子科学系,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《原子与分子物理学报》2022年第5期113-118,共6页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(61664004);半导体功率器件可靠性教育部工程研究中心开放基金(ERCME-KFJJ2019-(01))。

摘　　要：第三代半导体β-Ga_(2)O_(3)因其优异的性质在近年来备受国内外的关注,而获得质量较好的β-Ga_(2)O_(3)薄膜也就成了其广泛应用的关键.本文采用射频磁控溅射方法,以C面蓝宝石(Al_(2)O_(3))为衬底制备β-Ga_(2)O_(3)薄膜,并研究后退火工艺中退火时间对制得的β-Ga_(2)O_(3)薄膜材料的影响.XRD和AFM表征结果表明,随着退火时间的增加,薄膜的衍射峰强度表现为先增大后减小再增大的特性,半峰宽为先增大后减小,而晶粒尺寸与半峰宽相反;薄膜表面粗糙程度呈现先下降后上升的趋势.另外,利用积分球式分光光度计测试了薄膜的光学特性,结果表明薄膜的吸收光谱存在两个吸收峰值,分别位于250 nm和300 nm附近处,在深紫外区域有较好的吸收特性.The third-generation semiconductorβ-Ga_(2)O_(3)has attracted attention at home and abroad in recent years due to its excellent properties,and obtaining better qualityβ-Ga_(2)O_(3)films has become the key to its wide application.In this paper,the radio frequency magnetron sputtering method is used to prepareβ-Ga_(2)O_(3)film on C-plane sapphire(Al_(2)O_(3))as the substrate,and the effect of annealing time in the post-annealing process on the preparedβ-Ga_(2)O_(3)film material is studied.The XRD and AFM characterization results show that as the annealing time increases,the diffraction peak intensity of the film first increases,then decreases,and then increases.The half-peak width first increases and then decreases,while the grain size is opposite to it;the surface roughness of the film decreases first and then rises.In addition,the optical properties of the film were tested with an integrating sphere spectrophotometer,and the results showed that there are two absorption peaks in the absorption spectrum of the film,which are located near 250nm and 300nm respectively,and the film has good absorption characteristics in the deep ultraviolet region.

关 键 词：β-Ga_(2)O_(3)薄膜 射频磁控溅射 退火时间 衍射峰强度 光学特性 

分 类 号：O64[理学—物理化学]