锑基Ⅱ类超晶格InAs/InAsSb红外探测器的研究进展  

Research Progress of Antimony-Based Type-Ⅱ Superlattice InAs/InAsSb Infrared Detector

作　　者：杜鹏飞 叶伟[1] 萧生 李梦飞 Du Pengfei;Ye Wei;Xiao Sheng;Li Mengfei(School of Mechanical Engineering,Shaanxi University of Technology,Hanzhong 723001,Shaanxi,China)

机构地区：[1]陕西理工大学机械工程学院,陕西汉中723001

出　　处：《激光与光电子学进展》2022年第17期37-43,共7页Laser & Optoelectronics Progress

基　　金：陕西省教育厅专项科学研究计划(17JK0144,18JK0151);陕西理工大学人才启动项目(SLGQD2017-19)。

摘　　要：新型材料结构的设计是提高红外探测器性能的有效途径。锑基Ⅱ类超晶格InAs/InAsSb作为红外光敏材料时结构稳定,且具有低暗电流、高温工作特性以及优越的光电转化效率,是研制高温工作红外探测器的理想材料。综述了基于锑化物Ⅱ类超晶格InAs/InAsSb的研究进展,介绍了现阶段应用在典型单极势垒结构中的两种红外探测器性能,并对锑化物Ⅱ类超晶格InAs/InAsSb探测器的发展进行展望。The design of new material structure is an effective way to improve the performance of the infrared detector.Antimony-based type-Ⅱ superlattice InAs/InAsSb, as infrared photosensitive material, has stable structure, low dark current, high temperature operating characteristics and superior photoelectric conversion efficiency, which is the ideal material for developing infrared detectors at high temperature. This paper reviews the research progress of antimony-based type-Ⅱ super-lattices InAs/InAsSb, introduces the performance of two kinds of infrared detectors applied in typical unipolar barrier structures, and prospects the development of antimony-based type-Ⅱ superlattice InAs/InAsSb.

关 键 词：探测器 锑化物 Ⅱ类超晶格 红外探测器 

分 类 号：TN215[电子电信—物理电子学]