VGF法生长InP单晶循环水的影响分析  

Effect of Circulation Water to InP Monocrystal Grown by the VGF Method

作　　者：叶晓达 赵兴凯 韩家贤 韦华 王顺金 邱锋[2] 柳廷龙 刘汉保 黄平 Ye Xiaoda;Zhao Xingkai;Han Jiaxian;Wei Hua;Wang Shunjin;Qiu Feng;Liu Tinglong;Liu Hanbao;Huang Ping(Yunnan Xinyao semiconductor materials Co.,Ltd.,Kunming 650503,China;School of materials and energy,Yunnan University,Kunming 650503,China)

机构地区：[1]云南鑫耀半导体材料有限公司,云南昆明650503 [2]云南大学材料与能源学院,云南昆明650503

出　　处：《云南化工》2022年第10期24-28,共5页Yunnan Chemical Technology

摘　　要：磷化铟与砷化镓同为Ⅲ-Ⅴ族化合物半导体材料,广泛应用于光通信、微波毫米波通信等领域。由于垂直温度梯度凝固(VGF)技术中,晶体受到的温度梯度小,能生长出低位错,甚至零位错的单晶,而被广泛应用于磷化铟单晶的制备中。影响磷化铟单晶生长的因素很多,其中最重要的是热场环境,而冷却循环水能够起到调节热场梯度的作用,有较大的研究意义。通过控制单晶炉循环水进水温度及进水流量,探究了进水温度22~34℃与进水流量60~300 L/h的不同组合条件下,InP单晶生长的不同结果,并对不同进水温度和水流量对单晶生长的影响规律进行了分析。结果表明,循环水的温度和流量对热场温度梯度有影响,在进水温度30℃,流量100 L/h时,磷化铟的单晶率有所提升,位错密度在50/cm^(2)以下。InP and GaAs are both Ⅲ-Ⅴ compound semiconductor materials,which are widely used in optical communication,microwave,millimeter wave communication and other fields.Due to the lower temperature gradient that the crystal endured in VGF method,dislocations in the crystal are low or even to zero.Therefore,VGF technology is widely used in the preparation of InP monocrystal.We investigated the effect of circulation water inflow rate and temperature on single crystal growth.The experimental conditions of the inflow water temperature were 22℃~34℃and the inflow water flow was 60~300 L/h.Experiments were carried out on all combinations of the different experimental conditions.The results show that the temperature and flow of circulation water have an influence on the temperature gradient of thermal field in the furnace.Under 30℃and 100 L/h,we got a higher proportion of monocrystal,and dislocation density lower than 50/cm^(2) in the crystal.

关 键 词：垂直温度梯度凝固技术 INP单晶 循环水 水流量 温度 

分 类 号：TN304[电子电信—物理电子学]