典型电子系统总剂量效应行为级仿真  

Behavior-level simulation of the total dose effect of an electronic system

作　　者：马武英 何宝平[2] 刘林月[2] 郭红霞[2] 欧阳晓平[2] MA Wuying;HE Baoping;LIU Linyue;GUO Hongxia;OUYANG Xiaoping(School of Energy and Power Engineering,Xi′an Jiaotong University,Xi′an 710049,China;State Key Laboratory of EnvironmentalSimulation and Effects of Intense Pulse Radiation(Northwest Institute of Nuclear Technology),Xi′an 710024,China)

机构地区：[1]西安交通大学能源与动力工程学院,陕西西安710049 [2]强脉冲辐射环境模拟与效应国家重点实验室(西北核技术研究所),陕西西安710024

出　　处：《哈尔滨工程大学学报》2022年第11期1553-1558,共6页Journal of Harbin Engineering University

基　　金：国家自然科学基金项目(11922507).

摘　　要：为了实现电子系统的总剂量效应行为级仿真,本文提出了一种基于VHDL-AMS语言的行为级建模思路。利用VHDL-AMS语言对子电路或器件(如运算放大器、比较器和模数转换器等)的总剂量效应进行抽象建模,并从不同维度对模型的准确性进行了试验验证。在此基础上,依据器件、电路、模块之间的相互连接关系,构建典型电子系统总剂量效应行为级仿真模型,实现了其总剂量效应仿真,并与试验结果能够较好地吻合。基于行为级仿真建模,能有效简化系统总剂量效应建模难度,实现系统辐射敏感位置定位和损伤规律的再现,具有很好的应用价值,对空间电子系统的抗辐射加固设计和抗辐射性能预估能够提供技术支持。To explore the application of a behavior-level simulation method in the study of the total dose effect of an electronic system,this paper first proposes a behavior-level simulation method based on the VHDL-AMS language in different dimensions,considering operational amplifiers,comparators,and analog-to-digital converters,as the research subjects and subsequently verifying the model accuracy.In addition,according to the interconnection among devices,circuits,and modules,the behavior-level simulation model of the total dose effect of a typical elec-tronic system is constructed,realizing the simulation of the total dose effect.The result is in good agreement with the experimental results.The behavior-level-based simulation modeling can simplify the difficulty of modeling the total dose effect of a system,realizing a suitable radiation-sensitive positioning of the system and reproduction of the damage law.It has good application value,providing technical support for the radiation-resistant reinforcement design and radiation-resistant performance prediction of the space electronic system.

关 键 词：Γ射线 电离辐射 总剂量效应 仿真建模 运算放大器 电压比较器 系统 模型 

分 类 号：TL99[核科学技术—核技术及应用]