并联SiC-MOSFET可调节驱动电路设计  

Design of self regulating driving circuit for parallel SiC-MOSFET

作　　者：汪俊奇 邓永红[1] 徐海超 张腾召 汤礼凤 WANG Junqi;DENG Yonghong;XU Haichao;ZHANG Tengzhao;TANG Lifeng(Institute of Information and Control Technology,North China Institute of Science and Technology,Yanjiao,065201,China)

机构地区：[1]华北科技学院信息与控制技术研究所,北京东燕郊065201

出　　处：《华北科技学院学报》2022年第5期62-70,共9页Journal of North China Institute of Science and Technology

基　　金：中央高校基本科研业务费资助项目(3142018049);卓越工程师教育培养计划项目(GXHZ2017-05)。

摘　　要：目前,在电动汽车、航空航天、煤矿、海洋油田等高电压等级、高频、高温、高功率密度环境中,碳化硅器件容易出现过流过压等短时过载情况而目前市场应用的多数驱动电路无法适应各种型号的SiC-MOSFET,本文设计了一种以IX4351为驱动芯片,可适应大多数厂家碳化硅器件参数的驱动电路。该驱动电路可实现负压调节自适应各类型号的SiC-MOSFET并且能够提供足够的峰值电流,实现驱动碳化硅并联电路,分析了碳化硅驱动电路的特点,计算了驱动功率,给出以IX4351为驱动核的驱动电路原理图。仿真和实验结果证明,本文中设计的SiC-MOSFET驱动电路可驱动并联SiC-MOSFET,能够驱动不同厂家提供的不同参数的碳化硅器件。Aiming at the current short-term overload conditions such as overcurrent and overvoltage in high voltage,high frequency,high temperature,high power density environments such as electric vehicles,aerospace,coal mines,and offshore oil fields,and the current market application drive circuit design for silicon carbide devices Most of the driving circuits cannot realize the adaptive driving of various types of SiC-MOSFETs,etc.,a driving circuit with IX4351 as the driving chip,which can adapt to the parameters of most manufacturers’SiC devices,is researched and designed.The voltage regulation is adaptive to various types of SiC-MOSFETs and can provide enough peak current to drive the SiC parallel circuit.The characteristics of the SiC driving circuit are analyzed,the driving power is calculated,and the driving circuit with IX4351 as the driving core is designed.Schematic.The simulation and experimental results show that the SiC-MOSFET driving circuit designed in this paper can drive parallel SiC-MOSFETs,and can drive SiC devices with different device parameters provided by different manufacturers.

关 键 词：并联SiC-MOSFET IX4351 驱动电路 驱动电阻 

分 类 号：TM46[电气工程—电器] TN386[电子电信—物理电子学]