Hybrid C8-BTBT/In GaAs nanowire heterojunction for artificial photosynaptic transistors  被引量:1

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作  者:Yiling Nie Pengshan Xie Xu Chen Chenxing Jin Wanrong Liu Xiaofang Shi Yunchao Xu Yongyi Peng Johnny C.Ho Jia Sun Junliang Yang 

机构地区:[1]Hunan Key Laboratory for Super Microstructure and Ultrafast Process,School of Physics and Electronics,Central South University,Changsha 410083,China [2]Department of Materials Science and Engineering,City University of Hong Kong,Kowloon 999077,Hong Kong SAR,China [3]State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong,Kowloon 999077,Hong Kong SAR,China [4]Key Laboratory of Advanced Materials Processing&Mold(Zhengzhou University),Ministry of Education,Zhengzhou 450002,China

出  处:《Journal of Semiconductors》2022年第11期9-21,共13页半导体学报(英文版)

基  金:This work is supported by the National Natural Science Foundation of China(No 52173192 and No 61975241);the Huxiang Youth Talent Program of Hunan Province(2020RC3010);the Science and Technology Innovation Program of Hunan Province(2020RC4004);the Special Funding for the Construction of Innovative Provinces in Hunan Province(2020GK2024);the National Key Research and Development Program of China(2017YFA0206600);P.X.also thanks a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region,China(CityU RFS2021-1S04).

摘  要:The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing.Herein,a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and indium gallium arsenide(InGaAs)nanowires(NWs)hybrid heterojunction thin film as the active layer.Under illumination,the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine.The persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors,including excitatory postsynaptic current,long/short-term memory and Pavlovian learning.Furthermore,a high classification accuracy of 89.72%can be achieved through the single-layer-perceptron hardware-based neural network built from C8-BTBT/InGaAs NWs synaptic transistors.Thus,this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.

关 键 词:photonic synaptic transistor C8-BTBT INGAAS HETEROJUNCTION 

分 类 号:TN32[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]

 

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