第三代半导体材料专利分析  

Patent Analysis of Third-Generation Semiconductor Materials

作　　者：张帆 Zhang Fan(Guangdong Intellectual Property Protection Center,Guangzhou 510670,Guangdong Province,China)

机构地区：[1]广东省知识产权保护中心,广东广州510670

出　　处：《科学与信息化》2022年第21期125-127,共3页Technology and Information

摘　　要：本文通过对第三代半导体材料中的碳化硅、氮化镓进行专利分析,对第三代半导体材料及其制造工艺进行全球及国内专利申请量、专利申请人分析,并从专利角度给出国内第三代半导体材料产业的发展建议。This paper conducts the patent analysis of silicon carbide and gallium nitride in the third-generation semiconductor materials,analyzes the global and domestic patent applications and patent applicants for the third-generation semiconductor materials and their manufacturing processes,and gives suggestions for the development of the third-generation semiconductor materials industry in China from the patent perspective.

关 键 词：第三代半导体 专利 分析 

分 类 号：F42[经济管理—产业经济]