GeSe纳米电子器件整流特性的掺杂调控  

Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

作　　者：程杨名 廖文虎 CHENG Yangming;LIAO Wenhu(School of Information Science and Engineering,Jishou University,Jishou 416000,Hunan China;School of Physics and Electromechanical Engineering,Jishou University,Jishou 416000,Hunan China)

机构地区：[1]吉首大学信息科学与工程学院,湖南吉首416000 [2]吉首大学物理与机电工程学院,湖南吉首416000

出　　处：《吉首大学学报（自然科学版）》2022年第4期42-46,86,共6页Journal of Jishou University(Natural Sciences Edition)

基　　金：国家自然科学基金资助项目(11264013);湖南省自然科学基金面上项目(2021JJ30549);湖南省教育厅重点项目(18A293);吉首大学研究生科研项目(JDY21075)。

摘　　要：运用密度泛函理论和非平衡格林函数相结合的方法,研究了第Ⅴ主族原子(P,As,Sb)替位掺杂条件下不同中心半导体沟道长度的GeSe纳米电子器件的整流特性.结果表明,第Ⅴ族原子局部替位掺杂的扶手椅型GeSe纳米带在中心半导体沟道5.1 nm长度范围内,在正偏压下不同中心半导体沟道长度的扶手椅型GeSe纳米带电流随着电压的增大而增大;在负偏压下当中心半导体沟道长度从1.7 nm增加至3.4 nm时,电流不随电压的变化而变化,继续增大中心半导体沟道长度,电流大小接近于0,器件呈现显著的整流特性.The rectification characteristics of GeSe nanoelectronic devices with different channel length of the central semiconductor doped with group V atomic substitution is investigated by using a combination of density general function theory and nonequilibrium Green’s function.Results that: under positive bias, the current of armchair germanium selenide nanoribbons with 5.1 nm central semiconductor channel lengths increases with increasing voltage;while under negative bias, the current does not vary with voltage as the central semiconductor channel length increases from 1.7 nm to 3.4 nm;the magnitude is close to zero when the channel length of the central semiconductor continues to increase, and the devices exhibit significant rectification characteristics.

关 键 词：GeSe纳米带 整流 替位掺杂 电流-电压特性 

分 类 号：O472.4[理学—半导体物理]