The dielectric studies on sol–gel routed molybdenum oxide thin film  

作　　者：P.Adal Arasu R.Victor Williams 

机构地区：[1]Department of Physics,St.Joseph's College,Trichy,India

出　　处：《Journal of Advanced Dielectrics》2017年第2期21-27,共7页先进电介质学报（英文）

摘　　要：The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been investigated.Prepared films were annealed at temperatures 250℃,350℃ and 400℃.The phase transformation from amorphous to
-orthorhombic phase with preferential orientation(022)has been found by XRD for the film annealed above 250℃.The vibration modes of
-orthorhombic MoO_(3) have been examined by Raman spectrum.The predominant Raman's band of
-orthorhombic MoO_(3) thin film has been found at the frequency range 1000–600 cm^(-1).Using the UV–Vis spectrum,the band gap of the film is found to be 3.3–3.8 eV.The surface morphology of the MoO_(3) films has been examined by scanning electron microscope.The AC conductivity measurement of the MoO_(3) film has been carried out in the frequency range 10–10^(6) Hz.The frequency dependence of the impedance has been plotted in the complex plane.The variation of the capacitance and dielectric constant of MoO_(3) film with respect to temperature and frequency has been analyzed.Tunability of capacitance and figure of merit of the film are also determined.

关 键 词：Sol-gel dielectric constant CAPACITANCE TUNABILITY CURIE-TEMPERATURE FIGURE-OF-MERIT 

分 类 号：TG1[金属学及工艺—金属学]