FIGURE-OF-MERIT

作品数：9被引量：10H指数：1
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相关领域：电子电信更多>>
相关作者：吕京涛更多>>
相关机构：华中科技大学更多>>
相关期刊：《InfoMat》《Chinese Physics Letters》《Journal of Advanced Dielectrics》《Science China(Technological Sciences)》更多>>
相关基金：国家自然科学基金中国博士后科学基金国家高技术研究发展计划更多>>
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24.4 THz·V f_(T)×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
《Science China(Information Sciences)》2025年第3期399-400,共2页Chaoqun ZHANG Hong ZHOU Sami ALGHAMDI Kun ZHANG Zhihong LIU Yue HAO Jingcheng ZHANG 
supported by National Key Research and Development Program of China(Grant No.2021YFA0716400);National Natural Science Foundation of China(Grant No.62222407)。
Gallium nitride-based high-electron-mobility-transistors(HEMTs)have gained widespread interest and become primary candidates for next-generation high-frequency and high-power RF electronics,due to their wide bandgap,h...
关键词：AlN/GaN polarization HETEROJUNCTION 
Optimization of the average figure-of-merit zT in medium-entropy GeTe-based materials via entropy engineering
《Journal of Materiomics》2024年第4期956-963,共8页Xusheng Liu Keli Wang Peng Li Qiqi Tang Zhenlong Huang Yuan Lin Wu Wang Binbin Jiang Jiaqing He 
This work is supported by the National Natural Science Foundation of China(Grant No.52222209,11934007,and 52302262);the Science and Technology Innovation Committee Foundation of Shenzhen(Grant No.JCYJ20220530165000001);the Young Elite Scientists Sponsorship Program by CAST(Grant No.2021QNRC001);the Outstanding Talents Training Fund in Shenzhen(202108);the Natural Science Foundation of Sichuan(Grant No.2023NSFSC0953).
Entropy engineering has emerged as an effective strategy for improving the figure-of-merit zT by decelerating the phonon transport while maintaining good electrical transport properties of thermoelectric materials.Her...
关键词：Thermoelectric Germanium telluride Entropy engineering Thermoelectric cooler 
2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)
《Journal of Semiconductors》2023年第7期28-31,共4页Tingting Han Yuangang Wang Yuanjie Lv Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng 
supported by the National Natural Science Foundation of China under Grant U21A20503.
This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott...
关键词：β-Ga_(2)O_(3) breakdown voltage heterojunction diode(HJD) junction termination extension(JTE) power figure-of-merit(PFOM) 
Theoretical foundations of triboelectric nanogenerators(TENGs)被引量：9
《Science China(Technological Sciences)》2020年第7期1087-1109,共23页SHAO JiaJia JIANG Tao WANG ZhongLin 
supported by the National Key R&D Project from Minister of Science and Technology, China (Grant No. 2016YFA0202704);National Natural Science Foundation of China (Grant Nos. 51432005, 51702018, and 51561145021);Youth Innovation Promotion Association, CAS, and China Postdoctoral Science Foundation (Grant No. 2019M660766)。
Triboelectric nanogenerator(TENG) is an emerging powerful technology for converting ambient mechanical energy into electrical energy through the effect of triboelectricity. Starting from the expanded Maxwell’s equati...
关键词：triboelectric nanogenerator theoretical foundations displacement current three-dimensional model capacitor model figure-of-merits 
Ultrahigh figure-of-merit of Cu2Se incorporated with carbon coated boron nanoparticles被引量：1
《InfoMat》2019年第1期108-115,共8页Meng Li Sheik MdKazi Nazrul Islam Mujde Yahyaoglu Deng Pan Xun Shi Lidong Chen Umut Aydemir Xiaolin Wang 
This work was partially supported by the Australian Research Council(ARC)through a Discovery Project(DP 130102956,XLW);an ARC Professorial Future Fellowship project(FT 130100778,XLW);Linkage Infrastructure Equipment and Facilities(LIEF)Grant(LE 120100069,XLW);the ARC Centre of Excellence in Future Low-Energy Electronics Technologies(FLEET,CE170100039);LIEF(LE120100104).
Cu2Se based thermoelectric materials are of great potential for high-temperature energy harvesting due to their high-temperature figure-of-merit(zT).For further development of Cu2Se,both engineering and mid-temperatur...
关键词：average/engineering zT mid-temperature zT nanoparticle incorporation THERMOELECTRIC 
The dielectric studies on sol–gel routed molybdenum oxide thin film
《Journal of Advanced Dielectrics》2017年第2期21-27,共7页P.Adal Arasu R.Victor Williams 
The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been investigated.Prepared films were annealed at temperatures 250℃,350℃ and 400℃.T...
关键词：Sol-gel dielectric constant CAPACITANCE TUNABILITY CURIE-TEMPERATURE FIGURE-OF-MERIT 
A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect
《Journal of Semiconductors》2015年第3期79-84,共6页田瑞超 罗小蓉 周坤 徐青 魏杰 张波 李肇基 
Project supported by the National Natural Science Foundation of China(Nos.61176069,61376079);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0062)
A novel silicon-on-insulator（SOI） super-junction（SJ） LDMOS with an ultra-strong charge accumulation effect is proposed. It has two key features： an assisted-accumulation trench-type extending gate（TEG） with a h...
关键词：charge accumulation effect super junction breakdown voltage specific on-resistance 
A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench
《Chinese Physics Letters》2013年第8期212-215,共4页FAN Yuan-Hang LUO Xiao-Rong WANG Pei ZHOU Kun ZHANG Bo LI Zhao-Ji 
Supported by the National Natural Science Foundation of China under Grant No 61176069;the Program for New Century Excellent Talents in University of Ministry of Education of China(NCET-11-0062).
A novel silicon-on-insulator(SOI)metal-oxide-semiconductor field effect transistor(MOSFET)with a high figure of merit(FOM)is proposed.The device features a double-sided charge oxide-trench(DCT)and a trench gate extend...
关键词：TRENCH BREAKDOWN FIGURE 
An 8-bit 100-MS/s pipelined ADC without dedicated sample-and-hold amplifier
《Journal of Semiconductors》2010年第7期102-107,共6页张章 袁宇丹 郭亚炜 程旭 曾晓洋 
Project supported by the National High Technology Research and Development Program of China(No.2009AA011600);the Young Scientists Fund of Fudan University,China(No.09FQ33);the State Key Laboratory of ASIC & System(Fudan University),China (No.09MS008).
An 8-b 100-MS/s pipelined analog-to-digital converter（ADC） is presented.Without the dedicated sample-and -hold amplifier（SHA）,it achieves figure-of-merit and area 21%and 12%less than the conventional ADC with the ...
关键词：analog-to-digital converter PIPELINED removing dedicated SHA close-bandwidth FIGURE-OF-MERIT 
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