高压SiC基DSRD器件结构设计及脉冲电路优化  

Structural Design and Pulse Circuit Optimization of High Voltage SiC-based DSRD Devices

作　　者：李金磊 刘静楠 张景文[1,2] 刘鑫[1,2] 马烁尘 侯洵[1,2] LI Jinlei;LIU Jingnan;ZHANG Jingwen;LIU Xin;MA Shuochen;HOU Xun(Key Laboratory of Physical Electronics and Devices,Shaanxi Key Lab of Information Photonic Technique,School of Electronic Science and Engineering,Xi′an Jiaotong University,Xi′an 710049;Institute of Wide Bandgap Semiconductors,Xi′an Jiaotong University,Xi′an 710049)

机构地区：[1]西安交通大学电信学部电子科学与工程学院,陕西省信息光子技术重点实验室,电子物理与器件重点实验室,西安710049 [2]西安交通大学宽禁带半导体研究中心,西安710049

出　　处：《光子学报》2022年第10期405-412,共8页Acta Photonica Sinica

摘　　要：针对SiC漂移阶跃恢复二极管难以满足超快脉冲开关高频、大功率的要求,研究了一种高压SiC漂移阶跃恢复二极管(DSRD)器件,建立了相应物理模型。该高压SiC DSRD基区掺杂浓度为5×10^(15) cm^(-3)、厚度为18μm,单片耐压超1800 V、开关时间约500 ps。同时,基于高压SiC DSRD器件等效模型,优化电路参数,在负载端分别实现了8.8 kW、开关时间约500 ps的高压(2.2 kV)脉冲。Ultra-fast High-power Pulse Technology(UHPT)is a technology that converts or releases electromagnetic energy to specific loads in nanoseconds or even sub-nanoseconds to form ultra-high-power pulses.When the input energy is constant,the shorter the output time compression,the higher the pulse power obtained.It has a very broad application in biomedical,food processing,air purification,material modification,high-power microwave,ultra-broad spectrum and other fields.Common techniques that can be used to generate high-power pulses include:1)(Spark-gap,SG);2)(Nonlinear Transmission Lines,NLTLs);3)(Magnetic Pulse Compressor System,MPC);4)(Semiconductor Solid State Switch)Wait.Although high-voltage SG can achieve high-power nanosecond or even sub-nanosecond pulses,it is limited by factors such as short lifetime,low repetition frequency,and high jitter,and short lifetime will bring high cost consumption in practical applications.Compared with Si materials,wide bandgap semiconductor SiC has a wide bandgap,high thermal conductivity,and relatively mature wafer technology,which makes it very important in high temperature and high power fields.The only group IV-IV compound semiconductor containing Si element has better compatibility with traditional Si process,which can reduce the research and development cycle and cost,and lay a solid foundation for the industrial application of the device.The research on DSRD devices in Russia,Germany and Japan is leading the world.The voltage rise rate of SiC DSRD devices developed by them can reach 2~3 V/ps,which is much higher than that of Si DSRD(0.8~1 V/ps),but has yet to reach its theoretical valuation.However,domestic Si-based DSRD devices can achieve high-voltage pulses of tens of kV,but there are not many researches on SiC-based DSRD devices,which is extremely unfavorable for the realization and application of ultra-fast pulses in China.Therefore,it is necessary to speed up the development and application of SiC DSRD devices.This topic is based on SiC materials to explore the chara

关 键 词：碳化硅 漂移阶跃恢复二极管 仿真设计 脉冲发生电路 离化波理论 

分 类 号：TN305[电子电信—物理电子学]