基于电学法的GaN功率器件热阻测试研究  

Research on GaN Power Device Thermal Resistance Testing Methods based on the Electrical Method

作　　者：刘羽炎 朱建垣 罗潇 

机构地区：[1]中国电子技术标准化研究院 [2]工业和信息化部电子第五研究所

出　　处：《信息技术与标准化》2022年第11期40-43,48,共5页Information Technology & Standardization

摘　　要：针对功率器件的热阻测试需求,开展了基于电学法的GaN器件热阻测试方法研究。分别采用Vgs和Vds温敏参数进行电学法测试对比,分析了其温敏特性差异、测试电流、及加热电流对热阻测试结果的影响,通过集成电学法与红外法测试系统对热阻测试结果进行了对比,验证了两种测试结果的可信性。测试结果表明,Vgs和Vds呈现不同趋势的线性温度特性,电压Vds对于温度的响应显著低于Vgs,且热敏参数的选择是影响GaN功率器件热阻测试结果的主要原因。In response to the thermal resistance testing needs of power devices,research has been carried out on GaN device thermal resistance testing methods based on electrical methods.The electrical method respectively based on parameters of Vgs and Vds are tested to study the influence of temperature sensitive parameters,test current and heating current on the thermal test results resistance test results.And,thermal resistance test results are compared by integrating the electrical method with the infrared method test system to verify the credibility of results.The test results show that,Vgs and Vds show different trends in linear temperature characteristics,with the voltage Vds responding significantly less to temperature than Vgs.The choice of thermal parameters is the main reason for the thermal resistance test results of GaN devices.

关 键 词：热阻测试 温敏参数 GAN 功率器件 结温测试 

分 类 号：TN386[电子电信—物理电子学]