SnO_(2)基钙钛矿太阳能电池界面调控与性能优化  

Interface modification and performance optimization of SnO_(2) based perovskite solar cells

作　　者：汪志鹏 李瑞 张梅[1,2] 郭敏 WANG Zhi-peng;LI Rui;ZHANG Mei;GUO Min(School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing,Beijing 100083,China;State Key Laboratory of Advanced Metallurgy,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学冶金与生态工程学院,北京100083 [2]北京科技大学钢铁冶金新技术国家重点实验室,北京100083

出　　处：《工程科学学报》2023年第2期263-277,共15页Chinese Journal of Engineering

基　　金：国家自然科学基金资助项目(51572020,51772023)。

摘　　要：近十余年来,钙钛矿太阳能电池光电转换效率从3.8%提升至目前的25.5%,有望成为下一代商业用薄膜太阳能电池.然而,目前广泛使用的TiO_(2)电子传输层电子迁移率低、退火温度高、紫外光照稳定性差等特性使得TiO_(2)基钙钛矿太阳能电池性能,尤其是长期稳定性,面临巨大挑战.SnO_(2)由于良好的电子迁移率、适宜的能带结构、简单的低温溶液合成以及稳定的化学结构等优点成为替代TiO_(2)电子传输层的首选.目前,调控SnO_(2)/钙钛矿以及钙钛矿/空穴传输层界面是SnO_(2)基钙钛矿太阳能电池性能优化的关键.鉴于此,在详细介绍SnO_(2)电子传输层本体与表面,钙钛矿本体、晶界及表面缺陷类型及特征的基础之上,重点总结了SnO_(2)/钙钛矿、钙钛矿/空穴传输层界面调控及性能提升的研究进展.最后,针对SnO_(2)基钙钛矿太阳能电池器件界面调控与性能优化的研究趋势和发展方向做出展望.Over the past decade,the power conversion efficiency of perovskite solar cells has increased from 3.8%to the current 25.5%,which is expected to become the next generation of commercial thin-film solar cells.However,the widely used TiO_(2)electron transport layer has low electron mobility,requires a high annealing temperature,and has poor UV light stability,limiting the performance of TiO_(2)-based perovskite solar cells,especially long-term stability.SnO_(2)is expected to be the first choice to replace TiO_(2)electron transport layers because of its high electron mobility,suitable band structure,low-temperature solution synthesis,and stable chemical structure.Although the certified maximum efficiency of state-of-the-art SnO_(2)-based perovskite solar cells had exceeded 25%,it was still below its theoretical efficiency.Therefore,component engineering,interface engineering,solvent engineering,and other methods to improve the efficiency and stability of SnO_(2)-based perovskite solar cells have become a major research focus.Currently,regulating the SnO_(2)/perovskite and perovskite/hole transport layer interface is key to optimizing the performance of SnO_(2)-based perovskite solar cells.Most studies focused on improving the charge transport performance of SnO_(2)and modifying the SnO_(2)/perovskite interface,while few studies have addressed defect passivation of the perovskite layer and the modification of the perovskite/SnO_(2)interface.Therefore,it is essential to summarize the research progress of interface modification and performance optimization of SnO_(2)-based perovskite solar cells.This paper introduces the types and characteristics of defects in the bulk and surface of the SnO_(2)electron transport layer,as well as defects in the bulk,grain boundaries,and surface of the perovskite film.The research progress of the interface modification(bulk and surface defect passivation)and performance improvement for the SnO_(2)electron transport layer/perovskite and perovskite/hole transport layer are reviewed.Finally

关 键 词：钙钛矿太阳能电池 SnO_(2) 缺陷钝化 界面调控 性能优化 

分 类 号：O472[理学—半导体物理]