航天用氮化镓材料的研究进展  

Research Progress on Gallium Nitride Materials for Aerospace Applications

作　　者：季启政 王一凡 胡小锋 李兴冀[3] 杨剑群[3] 刘尚合 JI Qizheng;WANG Yifan;HU Xiaofeng;LI Xingji;YANG Jianqun;LIU Shanghe(National Key Laboratory on Electromagnetic Environment Effects,Army Engineering University Shijiazhuang Campus,Shijiazhuang 050003,China;Beijing Institute of Spacecraft Environment Engineering,Beijing 100094,China;School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]陆军工程大学石家庄校区电磁环境效应重点实验室,石家庄050003 [2]北京卫星环境工程研究所,北京100094 [3]哈尔滨工业大学材料科学与工程学院,哈尔滨150001

出　　处：《材料导报》2022年第22期86-91,共6页Materials Reports

基　　金：国家自然科学基金(61904007)。

摘　　要：氮化镓(GaN)材料由于具有优良的电学特性而受到了广泛的关注,有望在航天工程中获得重要应用。本文首先对GaN材料的特性进行了简要阐述,进而对基于GaN的高电子迁移率晶体管(AlGaN/GaN HEMTs)、空间太阳能电池、紫外探测器等的研究和应用现状进行了梳理及分析,最后从新型GaN器件的开发、空间环境适应性评价、GaN器件的加固等角度给出了航天器用GaN材料及器件的发展方向和建议。Gallium nitride(GaN) materials have received extensive attention due to their excellent electrical properties and are expected to find important applications in aerospace engineering. In this paper, the characteristics of GaN materials are briefly expounded, and then the research status of GaN materials in high electron mobility transistors(AlGaN/GaN HEMTs), space solar cells, ultraviolet detectors(UV detectors) and other fields is reviewed and analyzed. Finally, the future development direction and suggestions are given from the perspectives of the development of new GaN devices, the evaluation of space environment adaptability, and the reinforcement of GaN devices.

关 键 词：氮化镓 电学特性 空间环境 辐射效应 加固技术 

分 类 号：TB303[一般工业技术—材料科学与工程]