20 nm金属氧化物半导体场效应晶体管的噪声特性分析  

The noise characteristics of 20 nm metal-oxide-semiconductor field-effect transistors

作　　者：贾晓菲 魏群[2] 崔智军[1] 丁兵 陈文豪 JIA Xiaofei;WEI Qun;CUI Zhijun;DING Bing;CHEN Wenhao(Department of Electronic and Information Engineering,Ankang University,Ankang725000,Shaanxi Province,China;School of Physics,Xidian University,Xi'an 710071,China;Southwest China Institute of Electronic Technology,Chengdu 610063,China)

机构地区：[1]安康学院电子与信息工程学院,陕西安康725000 [2]西安电子科技大学物理学院,陕西西安710071 [3]中国西南电子技术研究所,四川成都610063

出　　处：《电子元件与材料》2022年第10期1060-1065,共6页Electronic Components And Materials

基　　金：国家自然科学基金(12174004);国家青年科学基金(61801005);陕西省科技厅项目(2022JM-391);安康学院应急管理专项(2020AYYJ01)。

摘　　要：传统短沟道的纳米MOSFET噪声主要为受抑制的散粒噪声,其次为热噪声;在建立器件的噪声模型时,并没有考虑栅极噪声源与源极噪声源二者之间的电荷耦合,其耦合效应会形成互相关噪声。实验测试了20 nm MOSFET的噪声,结果分析得到短沟道MOSFET的噪声主要为散粒噪声、热噪声和互相关噪声。其次,根据MOSFET的器件物理结构及特性推导了纳米MOSFET的互相关噪声公式。在此基础上,比较受抑制的散粒噪声、热噪声和互相关噪声随沟道长度、温度、源漏电压和栅极电压的变化关系,所得结论有助于提高MOSFET器件的工作效率、可靠性及寿命。In the traditional channel noise model,the noise in nano-MOSFET were the suppressed shot noise and thermal noise.However,the cross-correlation noise between the gate current noise and source current noise were not considered.In this study,the noise of 20 nm MOSFET were tested experimentally,and the result shows that the suppressed shot noise,thermal noise and cross-correlation noise are the main types of the noise in nano-MOSFET.Furthermore,according to the the physical structure and characteristics of the MOSFET,the cross-correlation noise model were derived.Based on this model,the variation of the suppressed shot noise,thermal noise and cross-correlation noise with the channel length,temperature,source-drain voltage and gate voltage were analyzed.The results could improve the efficiency,reliability and lifetime of the MOSFET devices.

关 键 词：MOSFET 互相关噪声 抑制散粒噪声 热噪声 

分 类 号：TN407[电子电信—微电子学与固体电子学]