Ni膜厚度对4H-SiC欧姆接触特性的影响  

Influence of Ni film thickness on ohmic contact characteristics of 4H-SiC

作　　者：王博 程萍 WANG Bo;CHENG Ping(Department of Micro-Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiaotong University,Shanghai 200240,China)

机构地区：[1]上海交通大学电子信息与电气工程学院微纳电子学系,上海200240

出　　处：《传感器与微系统》2022年第12期26-28,共3页Transducer and Microsystem Technologies

摘　　要：碳化硅(SiC)作为第三代半导体,具有宽禁带、高临界场强、高热导率、耐高温、耐腐蚀等优良性能,然而,良好的欧姆接触是制造SiC器件必不可少的条件。目前,关于SiC欧姆接触的研究还不成熟,报道较多的是金属材料镍(Ni),但有待更加深入的研究。本文选用金属Ni作为SiC的欧姆接触材料,通过磁控溅射工艺在SiC表面沉积不同厚度的Ni膜,并将样品在1 000℃的真空环境下退火2 min,研究了不同膜厚时的微观形貌和欧姆接触特性的变化。As a third-generation semiconductor, SiC has excellent properties such as wide band gap, high critical field strength, high thermal conductivity, high temperature resistance, and corrosion resistance.However, good ohmic contact is essentially important to manufacture SiC devices.At present, the research on SiC ohmic contact is not mature, and the metal material Ni is mostly reported, but more in-depth research is needed.Metal Ni is selected as the ohmic contact material of SiC,and the Ni films with different thickness are deposited on the surface of SiC by magnetron sputtering process.Then the samples are annealed in a vacuum environment at 1 000 ℃ for 2 min.The changes in the micro morphology and ohmic contact characteristics for the samples with different film thickness are studied.

关 键 词：碳化硅 镍膜 厚度 退火 比接触电阻 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]