具有或与开关功能的T沟道隧穿场效应管  

T -channel TFET with OR-AND Switching Function

作　　者：杨源 胡建平[1] 柳苗龙 YANG Yuan;HU Jian-Ping;LIU Miao-long(School of Information Science and Engineering,Ningbo University,Ningbo 315211,China)

机构地区：[1]宁波大学信息科学与工程学院,宁波315211

出　　处：《无线通信技术》2022年第3期54-58,62,共6页Wireless Communication Technology

摘　　要：为了应对传统CMOS器件所面临的一系列问题,本文提出了一种具有"或与"开关功能的新型TFET器件,并将其命名为具有或与开关功能的T沟道隧穿场效晶体管(T-Channel tunnel field-effect transistors with OR-AND switching behavior:TOA-TFET)。新器件具有三个独立偏置的栅极,相当于两个传统的单输入器件并联再与另外一个单输入器件串联,通过Silvaco TCAD软件仿真可以验证单个器件具有或与逻辑开关功能,极大的增强了单个晶体管的信号处理能力。我们详细分析了金属栅功函数和体硅厚度等参数对器件性能的影响并对其进行优化,最终优化出一个高性能的多功能逻辑器件。本文所提出的三输入TFET器件在电路设计中,使用单个晶体管就可以实现一些复杂的逻辑门,使电路得到简化并实现了低功耗的目标。In order to solve a series of problems faced by traditional CMOS devices, a new TFET device with OR-AND switching function is proposed, and it is named as T-Channel tunnel field-effect transistors with OR-AND switching behavior( TOA-TFET). The new device features three independently biased grids, equivalent to two conventional single-input devices in parallel with another single-input device in series. Silvaco TCAD software simulations can verify that a single device has the switching behavior of OR-AND logic, greatly enhancing the signal processing capabilities of a single transistor. We analyze the effect of metal gate work function and bulk silicon thickness on the device performance and optimize it, and finally optimize a high-performance multifunctional logic device. In the circuit design of the three-input TFET device proposed in this paper, some complex logic gates can be realized by using a single transistor, which simplifies the circuit and achieves the goal of low power consumption.

关 键 词：CMOS器件 TFET器件 开关功能 Silvaco TCAD仿真 

分 类 号：TN432[电子电信—微电子学与固体电子学]