光和电注入变带隙AlGaAs/GaAs负电子亲和势阵列阴极理论建模和结构特性分析  

Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap

作　　者：邓文娟[1,2] 周甜 王壮飞 吴粤川 彭新村[1,2] 邹继军[1] Deng Wen-Juan;Zhou Tian;Wang Zhuang-Fei;Wu Yue-Chuan;Peng Xin-Cun;Zou Ji-Jun(Engineering Research Cente of Nuclear Technology Application,Ministry of Education,East China University of Technology,Nanchang 330013,China;Jiangxi Province Engineering Research Center of New Energy Technology and Equipment,East China University of Technology,Nanchang 330013,China)

机构地区：[1]东华理工大学,核技术应用教育部工程研究中心,南昌330013 [2]东华理工大学,江西省新能源工艺及装备工程技术中心,南昌330013

出　　处：《物理学报》2022年第23期396-405,共10页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61961001,11875012,62061001,61771245);江西省自然科学基金(批准号:20181BAB202026,20192ACBL20003,20202BAB202013,20203BBE53030);江西省“双千计划”项目(批准号:jxsq2019201053);江西省教育厅科技项目(批准号:GJJ170451)资助的课题.

摘　　要：为了使具备光和电注入AlGaAs/GaAs负电子亲和势(NEA)阵列阴极获得较高的发射电流效率,基于变带隙发射阵列中电子输运的二维连续性方程,利用有限体积法进行数值求解和仿真,得到发射电流和发射电流效率.通过仿真得到既适合光注入又合适电注入的各层最佳参数范围.结果表明,选择占空比为2/3的阵列微纳米柱,获得光注入阴极的最佳入射光角度范围为10°—30°;光注入(电注入)情况下P型变带隙AlGaAs层阵列微纳米柱高度范围为0.3—0.6μm(0.1—0.3μm),N型变带隙AlGaAs层、N型AlGaAs层以及P型AlGaAs层最佳厚度范围分别为0.5—2.5μm(2—3μm),0.5—1.0μm(0.8—1.2μm)和0.2—0.5μm(0.1—0.3μm);P型AlGaAs层和N型AlGaAs层最佳掺杂浓度范围分别为5×10^(18)—1×10^(19) cm^(-3)(1×10^(18)—5×10^(18) cm^(-3))和1×10^(18)—5×10^(18) cm^(-3)(5×10^(17)—1×10^(18) cm^(-3)).光注入下发射电流效率最大为35.04%,单位长度最大发射电流为10.3 nA/μm;电注入下发射电流效率最大为31.23%,单位长度最大发射电流105.5μA/μm.In order to obtain high emission current efficiency of the AlGaAs/GaAs NEA array cathode,this array cathode has two ways to form electron emission,i.e.optical injection and electrical injection.The two-dimensional continuity equation of electronic transport in the variable bandgap emission array is solved numerically by using the finite volume method thereby obtaining the emission current and emission current efficiency.Simulation obtains the optimal parameter range for each layer of the AlGaAs/GaAs NEA array cathode under both optical injection and electrical injection.The results show that the optimal angle of incident light for the array cathode under light injection is 10°-30°for selecting an array micro-nano column with a duty cycle of 2/3.Under the condition of light injection,the P-type variable bandgap AlGaAs layer array micro-nano column height ranges from 0.3-0.6μm.Under the condition of electrical injection,the height of the micro-nano column of the P-type variable bandgap AlGaAs layer array is 0.1-0.3μm.The optimal thickness range of N-type variable bandgap AlGaAs layer,N-type AlGaAs layer,and P-type AlGaAs layer under light injection are 0.5-2.5μm,0.5-1.0μm and 0.2-0.5μm,respectively.The optimal thickness range of N-type variable bandgap AlGaAs layer,N-type AlGaAs layer,and P-type AlGaAs layer under electrical injection conditions are 2-3μm,0.8-1.2μm and 0.1-0.3μm,respectively.The optimal doping concentration of P-type AlGaAs layer and N-type AlGaAs layer under light injection are range from 5×10^(18) to 1×10^(19) cm^(-3) and from 1×10^(18) to 5×10^(18) cm^(-3),respectively.The optimal doping concentration of the P-type AlGaAs layer and the N-type AlGaAs layer under electrical injection range from 1×10^(18) to 5×10^(18) cm^(-3) and from 5×10^(17) to 1×10^(18) cm^(-3),respectively.The maximum efficiency of the emission current under the light injection is 35.04%,and the maximum emission current per unit length is 10.3 nA/μm.The maximum efficiency of the emission current under electr

关 键 词：光注入 电注入 阵列阴极 发射电流效率 

分 类 号：TB34[一般工业技术—材料科学与工程] TN20[电子电信—物理电子学]