磁性隧道结电阻与电流驱动相关性分析(英文)  

Current-Driven Dependence of Junction Resistance-Area Product of Magnetic Tunnel Junction

作　　者：陈建勇[1] 刘存业[1,2] 陈志谦[1] 徐庆宇[2] 倪刚[2] 

机构地区：[1]西南师范大学物理学系,重庆400715 [2]南京大学物理学系,固体微结构国家重点实验室,江苏南京210093

出　　处：《西南师范大学学报（自然科学版）》2002年第6期896-900,共5页Journal of Southwest China Normal University(Natural Science Edition)

基　　金：国家973项目(G1999064508).

摘　　要：利用离子束高真空复合溅射装置置备具有Ta缓冲层和Ta Fe Ta覆盖表面层的Fe Al2O3 FeCo的磁性隧道结.在零磁场下观测隧道结电导和结电阻面积积(RA)与垂直射入隧道结平面的自旋极化发射电流的依赖关系.研究发现,磁性隧道结的电导和RA的发射电流驱动效应取决于隧道结的物相成分、微结构和电流强度.在大驱动电流范围观测到电导特性不同的4个区域.A series of Fe/Al2O3/FeCo magnetic tunnel junction(MTJ)with a Ta buffer layer and a Ta/Fe/Ta capping layer were fabricated using ionbeam sputtering technique. We examine the process that the spinpolarized electrons current which follow perpendicular to the layers and scatter from the ferromagnetic layers cause the changes of the conduction and the junction resistancearea of the MTJ in the absence of applied magnetic field. The experiments show that the currentdriven effect of a MTJ in the zero magnetic field depends on the injectingcurrent intensities into the magnetic tunnel junction. We propose that the observed changes of junction resistancearea are due to excitations of injection current with a very wide range from 0 μA to 10 000 μA.

关 键 词：磁性隧道结 电流驱动 相关性 离子束溅射 结电阻 结电导 电流强度 

分 类 号：O511.4[理学—低温物理]