一种具有低EMI噪声的低阻空穴路径IGBT  

A Low Resistance Hole Path IGBT with Low EMI Noise

作　　者：成建兵[1] 刘立强 周嘉诚 吴家旭 李瑛楠 CHENG Jianbing;LIU Liqiang;ZHOU Jiacheng;WU Jiaxu;LI Yingnan(College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing,210023,CHN)

机构地区：[1]南京邮电大学电子与光学工程学院、柔性电子(未来技术)学院,南京210023

出　　处：《固体电子学研究与进展》2022年第5期347-351,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61274080)。

摘　　要：为了解决浮空P区IGBT器件在小电流开启时存在较大EMI噪声的问题,提出了一种低阻空穴路径结构的IGBT。新结构在浮空P区中引入P+层以形成高低结,在开启过程中,较低电势的P+层加强了浮空P区空穴沿空穴路径地流出,呈现出低阻空穴路径,从而降低位移电流对栅极地充电,使得器件有较低的EMI噪声。仿真结果表明,在相同的开启功耗下,该结构相对于普通空穴路径的IGBT结构,能够明显降低器件的dIC/dt的最大值,抑制了器件的EMI噪声。In order to solve the problem of large EMI noise when floating P-region IGBT devices were turned on at small current,an IGBT with low resistance hole path structure was proposed.The new structure introduces a P+layer into the floating p region to form a high-low junction.In the opening process,the P+layer with lower potential strengthens the flow of holes in the floating p region along the hole path,showing a low resistance hole path,thus reducing the displacement current to charge the gate electrode,and making the device has low EMI noise.The simulation results show that compared with the IGBT structure with ordinary hole path,this structure can significantly reduce the maximum dIC/dt of the device and suppress the EMI noise of the device under the same turn-on power consumption.

关 键 词：绝缘栅双极晶体管 浮空P区 小电流开启 电磁干扰噪声 

分 类 号：TN386[电子电信—物理电子学]