AlGaAs/GaAs PIN超宽带微波毫米波单刀三掷开关  

Ultra-broadband Millimeter-wave SP3T AlGaAs/GaAs PIN Switch

作　　者：章军云[1] 齐志央 凌志健 尹志军[1] 王溯源 李信[1] 王学鹏 陈堂胜[1,2] ZHANG Junyun;QI Zhiyang;LING Zhijian;YIN Zhijun;WANG Suyuan;LI Xin;WANG Xuepeng;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2022年第5期357-362,共6页Research & Progress of SSE

摘　　要：研制了基于异质结AlGaAs/GaAs PIN二极管的超宽带微波毫米波开关单片。通过异质结外延材料结构的设计和MOCVD生长技术、高台面PIN开关电路制备工艺技术、超宽带模型管S参数测试与电路设计,制作了一款0.05~50 GHz的超宽带PIN单刀三掷开关。测试结果表明:该微波毫米波开关在0.05~18 GHz频带内插入损耗为0.5~0.75 dB,隔离度大于41 dB;18~50 GHz频带内插入损耗为0.75~1.2 dB,隔离度大于27 dB;具有低插入损耗和高隔离度的开关切换特性。An ultra-broadband millimeter-wave switch MMIC based on heterojunction AlGaAs/GaAs PIN diode was developed.Through the design of heterojunction epitaxial material and MOCVD growth technology,PIN switch circuit fabrication with high mesa and ultra-broadband model extraction and circuit simulation,a 0.05-50 GHz ultra-broadband PIN signal-pole triple-throw(SP3T)switch was fabricated.The test results show that the insertion loss is 0.5-0.75 dB in the 0.05-18 GHz,and the isolation is greater than 41 dB.The insertion loss is 0.75-1.2 dB in the 18-50 GHz,and the isolation is greater than 27 dB.It has low insertion loss and high isola-tion switching characteristics.

关 键 词：铝镓砷 砷化镓 异质结 PIN二极管 毫米波 单刀三掷开关 

分 类 号：TN312.4[电子电信—物理电子学]